Chinese Optics Letters, Volume. 1, Issue 12, 12716(2003)
Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films
To improve the optical storage performance, Sn was doped into Ge_(2)Sb_(2)Te_(5) phase change thin films. The optical and thermal properties of Sn-doped Ge_(2)Sb_(2)Te_(5) film were investigated. The crystal structures of the as-sputtered and the annealed films were identified by the X-ray diffraction (XRD) method. The differential scanning calorimeter (DSC) method is used to get the crystallization temperature and crystallization energy (Ea). It was found that proper Sn-doping could highly improve storage performance of the Ge_(2)Sb_(2)Te_(5) media.
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Sipeng Gu, Lisong Hou, Qitao Zhao, Rui’an Huang, "Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films," Chin. Opt. Lett. 1, 12716 (2003)
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