High-efficiency green micro-LEDs with GaN tunnel junctions grown hybrid by PA-MBE and MOCVD

Yaozheng Wu; Bin Liu; Feifan Xu; Yimeng Sang; Tao Tao; Zili Xie; Ke Wang; Xiangqian Xiu; Peng Chen; Dunjun Chen; Hai Lu; Rong Zhang; Youdou Zheng

doi:10.1364/PRJ.424528

Photonics Research, Volume. 9, Issue 9, 1683(2021)

High-efficiency green micro-LEDs with GaN tunnel junctions grown hybrid by PA-MBE and MOCVD

Yaozheng Wu¹, Bin Liu^1,3、*, Feifan Xu¹, Yimeng Sang¹, Tao Tao¹, Zili Xie¹, Ke Wang¹, Xiangqian Xiu¹, Peng Chen¹, Dunjun Chen¹, Hai Lu¹, Rong Zhang^1,2,4、*, and Youdou Zheng¹

Author Affiliations

¹Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

²Xiamen University, Xiamen 361005, China

³e-mail: bliu@nju.edu.cn

⁴e-mail: rzhangxmu@xmu.edu.cn

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Yaozheng Wu, Bin Liu, Feifan Xu, Yimeng Sang, Tao Tao, Zili Xie, Ke Wang, Xiangqian Xiu, Peng Chen, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng, "High-efficiency green micro-LEDs with GaN tunnel junctions grown hybrid by PA-MBE and MOCVD," Photonics Res. 9, 1683 (2021)

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Paper Information

Category: Optoelectronics

Received: Mar. 10, 2021

Accepted: Jun. 28, 2021

Published Online: Aug. 12, 2021

The Author Email: Bin Liu (bliu@nju.edu.cn), Rong Zhang (rzhangxmu@xmu.edu.cn)

DOI:10.1364/PRJ.424528

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