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Journal of Semiconductors, Volume. 43, Issue 3, 032801(2022)

Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs

Lan Bi1,2, Yixu Yao1,2, Qimeng Jiang1,2, Sen Huang1,2, Xinhua Wang1,2, Hao Jin1,2, Xinyue Dai1,2, Zhengyuan Xu1, Jie Fan1,2, Haibo Yin1,2, Ke Wei1,2, and Xinyu Liu1,2
Author Affiliations
  • 1High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 2Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
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    (Color online) (a) Cross sectional schematic of the E-mode AlGaN/GaN MIS-HEMT. (b) Microscope photograph of a 1-mm device.

    Fig. 1. (Color online) (a) Cross sectional schematic of the E-mode AlGaN/GaN MIS-HEMT. (b) Microscope photograph of a 1-mm device.

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    (Color online) (a) Transfer, (b) output, and (c) three-terminal off-state leakage of the 1-mm E-mode MIS-HEMT.

    Fig. 2. (Color online) (a) Transfer, (b) output, and (c) three-terminal off-state leakage of the 1-mm E-mode MIS-HEMT.

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    (Color online) (a) Schematic of the gate-related capacitances in T-shape gate E-mode AlGaN/GaN MIS-HEMT. (b) Bias set of the CG–VG measurement, and (c) the multi-frequency curves of the 1-mm MIS-HEMT.

    Fig. 3. (Color online) (a) Schematic of the gate-related capacitances in T-shape gate E-mode AlGaN/GaN MIS-HEMT. (b) Bias set of the CG–VG measurement, and (c) the multi-frequency curves of the 1-mm MIS-HEMT.

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    (Color online) (a) Bias set of the CGD measurement. (b) CGD–VDG curves with varied hold and forward stressing voltage.

    Fig. 4. (Color online) (a) Bias set of the CGD measurement. (b) CGD–VDG curves with varied hold and forward stressing voltage.

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    (Color online) (a) Schematic and photo of the inductive switching circuit. (b) Waveform of the inductive switching under 50-V VBUS and (c) the turn-on transients of the DUT.

    Fig. 5. (Color online) (a) Schematic and photo of the inductive switching circuit. (b) Waveform of the inductive switching under 50-V VBUS and (c) the turn-on transients of the DUT.

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    Lan Bi, Yixu Yao, Qimeng Jiang, Sen Huang, Xinhua Wang, Hao Jin, Xinyue Dai, Zhengyuan Xu, Jie Fan, Haibo Yin, Ke Wei, Xinyu Liu. Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs[J]. Journal of Semiconductors, 2022, 43(3): 032801

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    Paper Information

    Category: Articles

    Received: Sep. 27, 2021

    Accepted: --

    Published Online: Mar. 21, 2022

    The Author Email:

    DOI:10.1088/1674-4926/43/3/032801

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology