Chinese Journal of Lasers, Volume. 52, Issue 1, 0103002(2025)

Deep Ultraviolet Photodetector Based on Ultra Wide Bandgap Semiconductor Gallium Oxynitride and Its Application in Arc Detection

Pudong Lu, Chao Wu, and Shunli Wang*
Author Affiliations
  • School of Science, Zhejiang Sci-Tech University, Hangzhou 310018, Zhejiang , China
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    Figures & Tables(6)
    Characterization results of GaON film detector. (a) XRD pattern; (b) XPS energy spectrum; (c) Ga 2p spectrum; (d) AFM pattern; (e) 1 µm SEM image; (f) 500 nm SEM image
    Schematics of three-layer structure and three pairs of forked electrodes of GaON thin film detector. (a) Schematic of three-layer structure; (b) schematic of three pairs of forked electrodes
    Photoelectric properties of GaON thin film detector. (a) I-V curves in dark and 254 nm light; (b) dynamic response curves under different illumination intensities at bias voltage of 10 V; (c) dynamic response curve at bias voltage of 10 V and light intensity of 1.05 mW/cm2; (d) rise/fall response time; (e) result after multiple cycles
    Detectivity and responsivity curves of GaON thin film detector
    Schematic diagram of arc detection system and arc response curves. (a) Arc detection system suitable for outdoor use based on GaON film detector; response curves when distance between detector and arc is (b) 8, (c) 15, and (d) 25 cm
    • Table 1. Performance comparison among GaON thin film detector and other recently reported photodetectors

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      Table 1. Performance comparison among GaON thin film detector and other recently reported photodetectors

      MaterialR /(A·W-1D* /JonesIdark /AResponse time /msReference
      MSM-β-Ga2O36.99×10-5@20 V1.0×10-1310424
      MSM-α-Ga2O30.19@10 V25
      MSM-m-MgZnO0.1@25 V8.8×10-1126
      Ga2O3 thin film0.364@18 V7.9×101027
      Amorphous Ga2O33.2×10-3@5 V1.02×10-9@10 V28
      Monocrystal Ga2O33.0×10-3@10 V1.0×10-84.4×10329
      MSM-Ga2O3 thin film1.1×10-3@30 V3.3×10-910030
      GaON thin film0.327@10V4.08×10140.94×10-8413This work
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    Pudong Lu, Chao Wu, Shunli Wang. Deep Ultraviolet Photodetector Based on Ultra Wide Bandgap Semiconductor Gallium Oxynitride and Its Application in Arc Detection[J]. Chinese Journal of Lasers, 2025, 52(1): 0103002

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    Paper Information

    Category: Materials

    Received: Jul. 18, 2024

    Accepted: Aug. 22, 2024

    Published Online: Jan. 13, 2025

    The Author Email: Wang Shunli (slwang@zstu.edu.cn)

    DOI:10.3788/CJL241061

    CSTR:32183.14.CJL241061

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