Chinese Journal of Lasers, Volume. 52, Issue 1, 0103002(2025)
Deep Ultraviolet Photodetector Based on Ultra Wide Bandgap Semiconductor Gallium Oxynitride and Its Application in Arc Detection
Fig. 1. Characterization results of GaON film detector. (a) XRD pattern; (b) XPS energy spectrum; (c) Ga 2p spectrum; (d) AFM pattern; (e) 1 µm SEM image; (f) 500 nm SEM image
Fig. 2. Schematics of three-layer structure and three pairs of forked electrodes of GaON thin film detector. (a) Schematic of three-layer structure; (b) schematic of three pairs of forked electrodes
Fig. 3. Photoelectric properties of GaON thin film detector. (a) I-V curves in dark and 254 nm light; (b) dynamic response curves under different illumination intensities at bias voltage of 10 V; (c) dynamic response curve at bias voltage of 10 V and light intensity of 1.05 mW/cm2; (d) rise/fall response time; (e) result after multiple cycles
Fig. 5. Schematic diagram of arc detection system and arc response curves. (a) Arc detection system suitable for outdoor use based on GaON film detector; response curves when distance between detector and arc is (b) 8, (c) 15, and (d) 25 cm
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Pudong Lu, Chao Wu, Shunli Wang. Deep Ultraviolet Photodetector Based on Ultra Wide Bandgap Semiconductor Gallium Oxynitride and Its Application in Arc Detection[J]. Chinese Journal of Lasers, 2025, 52(1): 0103002
Category: Materials
Received: Jul. 18, 2024
Accepted: Aug. 22, 2024
Published Online: Jan. 13, 2025
The Author Email: Wang Shunli (slwang@zstu.edu.cn)
CSTR:32183.14.CJL241061