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Microelectronics, Volume. 51, Issue 3, 413(2021)

TCAD Simulation of Si/Ge Heterojunction Double-Gate Tunneling FET

WANG Hanbin1,2, LIU Mengxin1, BI Jinshun1,3, and LI Wei2
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    WANG Hanbin, LIU Mengxin, BI Jinshun, LI Wei. TCAD Simulation of Si/Ge Heterojunction Double-Gate Tunneling FET[J]. Microelectronics, 2021, 51(3): 413

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    Received: Jul. 26, 2020

    Accepted: --

    Published Online: Mar. 11, 2022

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.200340

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology