[1] [1] Huang S., Wu H., Fan B. et al.. A chip-level electrothermal-coupled design model for high-power light-emitting diodes［J］. J. Appl. Phys., 2010, 107(5): 054509

[2] [2] J. H. Son, J. L. Lee. Numerical analysis of efficiency droop induced by piezoelectric polarization in InGaN/GaN light-emitting diodes［J］. Appl. Phys. Lett., 2010, 97(3): 032109

[3] [3] Jianzheng Hu, Lianqiao Yang, Moo Whan Shin. Electrical, optical and thermal degradation of high power GaN/InGaNlight-emitting diodes［J］. J. Phys. D: Appl. Phys., 2008, 41(3): 035107

[4] [4] Yong Hoon Cho, G. H. Gainer, A. J. Fischer et al.. "S-shaped" temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells［J］. Appl. Phys. Lett., 1998, 73(10): 1370～1372

[5] [5] Cui Desheng, Guo Weiling, Cui Bifeng et al.. Effects of human-body-mode electrostaticdischarge on GaN-based power light-emitting diode［J］. Acta Optica Sinica, 2011, 31(3): 0323004

[6] [6] Wang Yanming, Xiong Chuanbing, Wang Guangxu et al.. Study on aging characterization of 1 W epitaxy on Si substrate blue LED based on different substrates［J］. Acta Optica Sinica, 2010, 30(6): 1749～1754

[7] [7] Nakamura S.. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes［J］. Science, 1998, 281(5379): 956～961

[8] [8] D. Cherns, S. J. Henley. Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence［J］. Appl. Phys. Lett., 2001, 78(18): 2691～2693

[9] [9] J. J. Wierer, Jr., A. J. Fischer, D. D. Koleske. The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices［J］. Appl. Phys. Lett., 2010, 96(5): 051107

[10] [10] A. Bell, S. Srinivasan, C. Plumlee et al.. Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1-xN layers［J］. J. Appl. Phys., 2004, 95(9): 4670~4674

[11] [11] Shihwei Feng, Yungchen Cheng, Yiyin Chung et al.. Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures［J］. J. Appl. Phys., 2002, 92(8): 4441～4448

[12] [12] E. Kuokstis, J. W. Yang, G. Simin et al.. Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells［J］. Appl. Phys. Lett., 1998, 80(6): 977～979

[13] [13] Li Shuti, Jiang Fengyi, Fan Guanghan et al.. The bowing parameters and Stokes′ shift in InGaN films［J］. Acta Optica Sinica, 2004, 24(6): 751～755

[14] [14] S. Kalliakos, X. B. Zhang, T. Taliercio et al.. Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes［J］. Appl. Phys. Lett., 2002, 80(3): 428～430

[15] [15] D. M. Graham, A. Soltani-Vala, P. Dawson et al.. Optical and microstructural studies of InGaN/GaN single-quantum-well structures［J］. J. Appl. Phys., 2005, 97(10): 103508

[16] [16] Fan Zhijun, Liu Xianglin, Wan Shouke et al.. Dependence of InGaN photoluminescence on temperature［J］. Chinese Journal of Semiconductors, 2001, 22(5): 569～572

[17] [17] T. Wang, J. Bai, S. Sakai. Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes［J］. Appl. Phys. Lett., 2001, 78(18): 2617～2619

[18] [18] K. Kazlauskas, G. Tamulaitis, A. Zukauskas. Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping［J］. Appl. Phys. Lett., 2003, 83(18): 3722～3724

[19] [19] K. Kazlauskas, G. Tamulaitis, A. Zukauskas. Exciton hopping in InxGa1-xN multiple quantum wells［J］. Phys. Rev. B, 2005, 71(8): 085306