Influence of AlGaN Double Barrier Structure on Crystal Quality and Luminescent Properties of InGaN/GaN MQWs Solar Cell Materials Containing High Indium Components

SHAN Hengsheng; LI Minghui; LI Chengke; LIU Shengwei; MEI Yunjian; SONG Yifan; LI Xiaoya

Journal of Synthetic Crystals, Volume. 52, Issue 1, 83(2023)

SHAN Hengsheng^1,2、*, LI Minghui^1,3, LI Chengke^1,3, LIU Shengwei^1,3, MEI Yunjian^1,3, SONG Yifan^1,3, and LI Xiaoya⁴

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SHAN Hengsheng, LI Minghui, LI Chengke, LIU Shengwei, MEI Yunjian, SONG Yifan, LI Xiaoya. Influence of AlGaN Double Barrier Structure on Crystal Quality and Luminescent Properties of InGaN/GaN MQWs Solar Cell Materials Containing High Indium Components[J]. Journal of Synthetic Crystals, 2023, 52(1): 83

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Paper Information

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Received: Sep. 20, 2022

Accepted: --

Published Online: Mar. 18, 2023

The Author Email: Hengsheng SHAN (hsshan@sust.edu.cn)

DOI:

CSTR:32186.14.

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology