In this paper, a double-barrier structure AlGaN-InGaN/GaN MQWs-AlGaN solar cell materials containing high indium components was grown on (001)-oriented patterned sapphire substrate (PSS) by metal organic chemical vapor deposition (MOCVD) technology. Compared with the MQWs solar cell material containing AlGaN electron barrier structure with low indium, it is found that the material of this structure has a smaller full width at half maximum (FWHM) by high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) spectroscopy analysis, and the dislocation density of this structural material is also reduced by an order of magnitude to 107 cm-2 by the dislocation density formula; at the same time, the strain relaxation in the active region decreases by 51%. In addition, luminous intensity of this structural material is enhanced by 35%. The results show that the epitaxial material containing AlGaN double barrier structure can reduce the dislocation density in the active region, decrease the number of non-radiative recombination centers, and increase the number of effective photo-generated carriers in the active region, which provides experimental basis for the preparation of high efficiency solar cells.