Researching | High-gain waveguide amplifiers in Si3N4 technology via double-layer monolithic integration

Photonics Research, Volume. 8, Issue 10, 1634(2020)

High-gain waveguide amplifiers in Si₃N₄ technology via double-layer monolithic integration On the Cover

Jinfeng Mu^*, Meindert Dijkstra, Jeroen Korterik, Herman Offerhaus, and Sonia M. García-Blanco

Author Affiliations

Optical Sciences Group, MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands

show less

Full Text Get PDF

Figures&Tables (7)

References (42)

Paper Information

References(42)

[1] F. Kish, V. Lal, P. Evans, S. W. Corzine, M. Ziari, T. Butrie, M. Reffle, H. S. Tsai, A. Dentai, J. Pleumeekers, M. Missey, M. Fisher, S. Murthy, R. Salvatore, P. Samra, S. Demars, N. Kim, A. James, A. Hosseini, P. Studenkov, M. Lauermann, R. Going, M. Lu, J. Zhang, J. Tang, J. Bostak, T. Vallaitis, M. Kuntz, D. Pavinski, A. Karanicolas, B. Behnia, D. Engel, O. Khayam, N. Modi, M. R. Chitgarha, P. Mertz, W. Ko, R. Maher, J. Osenbach, J. T. Rahn, H. Sun, K. T. Wu, M. Mitchell, D. Welch. System-on-chip photonic integrated circuits. IEEE J. Sel. Top. Quantum Electron., 24, 6100120(2018).

[2] H. Subbaraman, X. Xu, A. Hosseini, X. Zhang, Y. Zhang, D. Kwong, R. T. Chen. Recent advances in silicon-based passive and active optical interconnects. Opt. Express, 23, 2487-2511(2015).

[3] E. Lim, J. Song, Q. Fang, C. Li, X. Tu, N. Duan, K. K. Chen, R. P. Tern, T. Liow. Review of silicon photonics foundry efforts. IEEE J. Sel. Top. Quantum Electron., 20, 405-416(2014).

[4] J. C. Hulme, J. K. Doylend, J. E. Bowers. Widely tunable Vernier ring laser on hybrid silicon. Opt. Express, 21, 19718-19722(2013).

[5] E. Kasper, M. Kittler, M. Oehme, T. Arguirov. Germanium tin: silicon photonics toward the mid-infrared [Invited]. Photon. Res., 1, 69-76(2013).

[6] P. Muñoz, G. Micó, L. Bru, D. Pastor, D. Pérez, J. Doménech, J. Fernández, R. Baños, B. Gargallo, R. Alemany, A. Sánchez, J. Cirera, R. Mas, C. Domínguez. Silicon nitride photonic integration platforms for visible, near-infrared and mid-infrared applications. Sensors, 17, 2088(2017).

[7] D. J. Blumenthal, R. Heideman, D. Geuzebroek, A. Leinse, C. Roeloffzen. Silicon nitride in silicon photonics. Proc. IEEE, 106, 2209-2231(2018).

[8] C. G. H. Roeloffzen, L. Zhuang, C. Taddei, A. Leinse, R. G. Heideman, P. W. L. van Dijk, R. M. Oldenbeuving, D. A. I. Marpaung, M. Burla, K.-J. Boller. Silicon nitride microwave photonic circuits. Opt. Express, 21, 22937-22961(2013).

[9] L. Gaeta, M. Lipson, T. J. Kippenberg. Photonic-chip-based frequency combs. Nat. Photonics, 13, 158-169(2019).

[10] Z. Subramanian, E. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. Van Dorpe, J. Van Campenhout, W. Bogaerts, P. Bienstman, N. Le Thomas, D. Van Thourhout, Z. Hens, G. Roelkens, R. Baets. Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip [Invited]. Photon. Res., 3, B47-B59(2015).

[11] C. Taballione, T. A. W. Wolterink, J. Lugani, A. Eckstein, B. A. Bell, R. Grootjans, I. Visscher, D. Geskus, C. G. H. Roeloffzen, J. J. Renema, I. A. Walmsley, P. W. H. Pinkse, K.-J. Boller. 8×8 reconfigurable quantum photonic processor based on silicon nitride waveguides. Opt. Express, 27, 26842-26857(2019).

[12] V. Poulton, M. J. Byrd, M. Raval, Z. Su, N. Li, E. Timurdogan, D. Coolbaugh, D. Vermeulen, M. R. Watts. Large-scale silicon nitride nanophotonic phased arrays at infrared and visible wavelengths. Opt. Lett., 42, 21-24(2017).

[13] B. Stern, X. Ji, A. Dutt, M. Lipson. Compact narrow-linewidth integrated laser based on a low-loss silicon nitride ring resonator. Opt. Lett., 42, 4541-4544(2017).

[14] Y. Fan, J. P. Epping, R. M. Oldenbeuving, C. G. H. Roeloffzen, M. Hoekman, R. Dekker, R. G. Heideman, P. J. M. van der Slot, K. J. Boller. Optically integrated InP-Si₃N₄ hybrid laser. IEEE Photonics J., 8, 1505111(2016).

[15] Y. Lin, C. Browning, R. B. Timens, D. H. Geuzebroek, C. G. H. Roeloffzen, M. Hoekman, D. Geskus, R. M. Oldenbeuving, R. G. Heideman, Y. Fan, K. J. Boller, L. P. Barry. Characterization of hybrid InP-triplex photonic integrated tunable lasers based on silicon nitride (Si₃N₄/SiO₂) microring resonators for optical coherent system. IEEE Photonics J., 10, 1400108(2018).

[16] C. G. H. Roeloffzen, M. Hoekman, E. J. Klein, L. S. Wevers, R. B. Timens, D. Marchenko, D. Geskus, R. Dekker, A. Alippi, R. Grootjans, A. van Rees, R. M. Oldenbeuving, J. P. Epping, R. G. Heideman, K. Wörhoff, A. Leinse, D. Geuzebroek, E. Schreuder, P. W. L. van Dijk, I. Visscher, C. Taddei, Y. Fan, C. Taballione, Y. Liu, D. Marpaung, L. Zhuang, M. Benelajla, K. J. Boller. Low-loss Si₃N₄ triplex optical waveguides: technology and applications overview. IEEE J. Sel. Top. Quantum Electron., 24, 4400321(2018).

[17] O. de Beeck, B. Haq, L. Elsinger, A. Gocalinska, E. Pelucchi, B. Corbett, G. Roelkens, B. Kuyken. Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing. Optica, 7, 386-393(2020).

[18] M. Belt, T. Huffman, M. L. Davenport, W. Li, J. S. Barton, D. J. Blumenthal. Arrayed narrow linewidth erbium-doped waveguide-distributed feedback lasers on an ultra-low-loss silicon-nitride platform. Opt. Lett., 38, 4825-4828(2013).

[19] J. D. B. Bradley, E. S. Hosseini, , Z. Su, T. N. Adam, G. Leake, D. Coolbaugh, M. R. Watts. Monolithic erbium- and ytterbium-doped microring lasers on silicon chips. Opt. Express, 22, 12226-12237(2014).

[20] G. Singh, , J. D. B. Bradley, N. Li, E. S. Magden, M. Moresco, T. N. Adam, G. Leake, D. Coolbaugh, M. R. Watts. Resonant pumped erbium-doped waveguide lasers using distributed Bragg reflector cavities. Opt. Lett., 41, 1189-1192(2016).

[21] , N. Li, E. S. Magden, G. Singh, N. Singh, A. Baldycheva, E. S. Hosseini, J. Sun, M. Moresco, T. N. Adam, G. Leake, D. Coolbaugh, J. D. B. Bradley, M. R. Watts. Ultra-narrow-linewidth Al₂O₃:Er³⁺ lasers with a wavelength-insensitive waveguide design on a wafer-scale silicon nitride platform. Opt. Express, 25, 13705-13713(2017).

[22] N. Li, D. Vermeulen, Z. Su, E. S. Magden, M. Xin, N. Singh, A. Ruocco, J. Notaros, C. V. Poulton, E. Timurdogan, C. Baiocco, M. R. Watts. Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform. Opt. Express, 26, 16200-16211(2018).

[23] J. Rönn, W. Zhang, A. Autere, X. Leroux, L. Pakarinen, C. Alonso-Ramos, A. Säynätjoki, H. Lipsanen, L. Vivien, E. Cassan, Z. Sun. Ultra-high on-chip optical gain in erbium-based hybrid slot waveguides. Nat. Commun., 10, 432(2019).

[24] R. C. Figueiredo, N. S. Ribeiro, A. M. O. Ribeiro, C. M. Gallep, E. Conforti. Hundred-picoseconds electro-optical switching with semiconductor optical amplifiers using multi-impulse step injection current. J. Lightwave Technol., 33, 69-77(2015).

[25] M. Pollnau. Rare-earth-ion-doped channel waveguide lasers on silicon. IEEE J. Sel. Top. Quantum Electron., 21, 414-425(2015).

[26] R. Soulard, A. Zinoviev, J. L. Doualan, E. Ivakin, O. Antipov, R. Moncorgé. Detailed characterization of pump-induced refractive index changes observed in Nd:YVO₄, Nd:GdVO₄ and Nd:KGW. Opt. Express, 18, 1553-1568(2010).

[27] J. D. B. Bradley, M. Costa de Silva, M. Gay, L. Bramerie, A. Driessen, K. Wörhoff, J.-C. Simon, M. Pollnau. 170 Gbit/s transmission in an erbium-doped waveguide amplifier on silicon. Opt. Express, 17, 22201-22208(2009).

[28] D. Geskus, S. Aravazhi, S. M. García-Blanco, M. Pollnau. Giant optical gain in a rare-earth-ion-doped microstructure. Adv. Mater., 24, OP19-OP22(2012).

[29] M. A. Sefunc, F. B. Segerink, S. M. García-Blanco. High index contrast passive potassium double tungstate waveguides. Opt. Mater. Express, 8, 629-638(2018).

[30] A. Aghajani, G. S. Murugan, N. P. Sessions, V. Apostolopoulos, J. S. Wilkinson. Waveguide lasers in ytterbium-doped tantalum pentoxide on silicon. Opt. Lett., 40, 2549-2552(2015).

[31] H. C. Frankis, H. M. Mbonde, D. B. Bonneville, C. Zhang, R. Mateman, A. Leinse, J. D. B. Bradley. Erbium-doped TeO₂-coated Si₃N₄ waveguide amplifiers with 5 dB net gain. Photon. Res., 8, 127-134(2020).

[32] K. M. Kiani, H. C. Frankis, H. M. Mbonde, R. Mateman, A. Leinse, A. P. Knights, J. D. B. Bradley. Thulium-doped tellurium oxide waveguide amplifier with 7.6 dB net gain on a silicon nitride chip. Opt. Lett., 44, 5788-5791(2019).

[33] H. Penilla, L. F. Devia-Cruz, M. A. Duarte, C. L. Hardin, Y. Kodera, J. E. Garay. Gain in polycrystalline Nd-doped alumina: leveraging length scales to create a new class of high-energy, short pulse, tunable laser materials. Light Sci. Appl., 7, 33(2018).

[34] J. D. B. Bradley, M. Pollnau. Erbium-doped integrated waveguide amplifiers and lasers. Laser Photonics Rev., 5, 368-403(2011).

[35] N. Li, E. S. Magden, Z. Su, N. Singh, A. Ruocco, M. Xin, M. Byrd, P. T. Callahan, J. D. B. Bradley, C. Baiocco, D. Vermeulen, M. R. Watts. Broadband 2-μm emission on silicon chips: monolithically integrated holmium lasers. Opt. Express, 26, 2220-2230(2018).

[36] S. A. Vázquez-Córdova, M. Dijkstra, E. H. Bernhardi, F. Ay, K. Wörhoff, J. L. Herek, S. M. García-Blanco, M. Pollnau. Erbium-doped spiral amplifiers with 20 dB of net-gain on silicon. Opt. Express, 22, 25993-26004(2014).

[37] E. H. Bernhardi, H. A. G. M. van Wolferen, L. Agazzi, M. R. H. Khan, C. G. H. Roeloffzen, K. Wörhoff, M. Pollnau, R. M. de Ridder. Ultra-narrow-linewidth, single-frequency distributed feedback waveguide laser in Al₂O₃:Er³⁺ on silicon. Opt. Lett., 35, 2394-2396(2010).

[38] J. Mu, M. Dijkstra, Y. Yong, M. de Goede, L. Chang, S. M. García-Blanco. Monolithic integration of Al₂O₃ and Si₃N₄ toward double-layer active-passive platform. IEEE J. Sel. Top. Quantum Electron., 25, 8200911(2019).

[39] J. Mu, M. Dijkstra, S. M. García-Blanco. Resonant coupling for active-passive monolithic integration of Al₂O₃ and Si₃N₄. IEEE Photonics Technol. Lett., 31, 771-774(2019).

[40] J. Mu, S. A. Vázquez-Córdova, M. A. Sefunc, Y.-S. Yong, S. M. García-Blanco. A low-loss and broadband MMI-based multi/demultiplexer in Si₃N₄/SiO₂ technology. J. Lightwave Technol., 34, 3603-3609(2016).

[41] J. D. B. Bradley, L. Agazzi, D. Geskus, F. Ay, K. Wörhoff, M. Pollnau. Gain bandwidth of 80 nm and 2 dB/cm peak gain in Al₂O₃:Er³⁺ optical amplifiers on silicon. J. Opt. Soc. Am. B, 27, 187-196(2010).

[42] Y. Okamura, S. Yoshinaka, S. Yamamoto. Measuring mode propagation losses of integrated optical waveguides: a simple method. Appl. Opt., 22, 3892-3894(1983).

Tools

Get Citation

Copy Citation Text

Jinfeng Mu, Meindert Dijkstra, Jeroen Korterik, Herman Offerhaus, Sonia M. García-Blanco, "High-gain waveguide amplifiers in Si₃N₄ technology via double-layer monolithic integration," Photonics Res. 8, 1634 (2020)

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Integrated Optics

Received: Jun. 29, 2020

Accepted: Aug. 19, 2020

Published Online: Sep. 29, 2020

The Author Email: Jinfeng Mu (jinfeng.mu@icloud.com)

DOI:10.1364/PRJ.401055

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology