[1] [1] M. Razeghi, Y. H. Choi, X. He et al.. Development and applications of Ⅲ-Ⅴ semiconductors [J]. Materials Science and Technology, 1995, 11:21～23

[2] [2] J. K. Wade, L. J. Mawst, D. Botez et al.. 6.1 W continuous wave front-facet power from Al-free active-region (λ=850 nm) diode lasers [J]. Appl. Phys. Lett., 1998, 72(1):4～6

[3] [3] J. K. Wade, L. J. Mawst, D. Botez et al.. High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers [J]. Appl. Phys. Lett., 1997, 70(2):149～151