[1] [1] HUSAIN I, OZPINECI B, ISLAM M S, et al. Electric drive technology trends, challenges, and opportunities for future electric vehicles[J]. Proc IEEE, 2021, 109(6): 1039–1059.

[2] [2] TSAO J Y, CHOWDHURY S, HOLLIS M A, et al. Ultrawide-bandgap semiconductors: Research opportunities and challenges[J]. Adv Electron Mater, 2018, 4(1): 1600501.

[3] [3] CHIKOIDZE E, ROGERS D J, TEHERANI F H, et al. Puzzling robust 2D metallic conductivity in undoped -Ga2O3 thin films[J]. Mater Today Phys, 2019, 8: 10–17.

[4] [4] YEBOAH L A, OPPONG P A, MALIK A A, et al. Exploring innovations, sustainability and future opportunities in semiconductor technologies[J]. Int J Adv Nano Comput Anal, 2024, 3(2): 1–42.

[5] [5] YANG J L, LIU K W, CHEN X, et al. Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors[J]. Prog Quantum Electron, 2022, 83: 100397.

[6] [6] RAFIN S M S H, AHMED R, HAQUE M A, et al. Power electronics revolutionized: A comprehensive analysis of emerging wide and ultrawide bandgap devices[J]. Micromachines, 2023, 14(11): 2045.

[9] [9] PEARTON S J, YANG J C, CARY P H, et al. A review of Ga2O3 materials, processing, and devices[J]. 2018, 5(1): 011301.

[10] [10] LEWIS B G, PAINE D C. Applications and processing of transparent conducting oxides[J]. MRS Bull, 2000, 25(8): 22–27.

[11] [11] TIPPINS H H. Optical absorption and photoconductivity in the band edge of -Ga2 O3[J]. Phys Rev, 1965, 140: 316–319.

[12] [12] TOMM Y, REICHE P, KLIMM D, et al. Czochralski grown Ga2O3 crystals[J]. J Cryst Growth, 2000, 220(4): 510–514.

[13] [13] HARWIG T, KELLENDONK F. Some observations on the photoluminescence of doped -galliumsesquioxide[J]. J Solid State Chem, 1978, 24(3/4): 255–263.

[14] [14] LOU Z, LI L D, SHEN G Z. High-performance rigid and flexible ultraviolet photodetectors with single-crystalline ZnGa2O4 nanowires[J]. Nano Res, 2015, 8(7): 2162–2169.

[15] [15] TSAI S H, BASU S, HUANG C Y, et al. Deep-ultraviolet photodetectors based on epitaxial ZnGa2O4 thin films[J]. Sci Rep, 2018, 8(1): 14056.

[16] [16] YUAN Y, LI Z Y, HOU X H, et al. Enhancing the performance of -Ga2O3 solar-blind photodetectors based on ZnGa2O4 substrate by bottom-up Zn diffusion doping[J]. J Alloys Compd, 2023, 969: 171596.

[17] [17] SHEN Y C, TUNG C Y, HUANG C Y, et al. Study on optoelectronic characteristics of ZnGa2O4 thin-film phototransistors[J]. ACS Appl Electron Mater, 2019, 1(5): 783–788.

[18] [18] ORITA M, HIRAMATSU H, OHTA H, et al. Preparation of highly conductive, deep ultraviolet transparent -Ga2O3 thin film at low deposition temperatures[J]. Thin Solid Films, 2002, 411(1): 134–139.

[19] [19] ZHANG Y J, YAN J L, ZHAO G, et al. First-principles study on electronic structure and optical properties of Sn-doped -Ga2O3[J]. Phys B Condens Matter, 2010, 405(18): 3899–3903.

[20] [20] KACHEL K, KORYTOV M, GOGOVA D, et al. A new approach to free-standing GaN using -Ga2O3 as a substrate[J]. CrystEngComm, 2012, 14(24): 8536–8540.

[21] [21] HUSSEN M K, DEJENE F B. Effect of Cr3+ doping on structural and optical property of ZnGa2O4 synthesized by Sol gel method[J]. Optik, 2019, 181: 514–523.

[22] [22] DUAN X L, YUAN D R, WANG L H, et al. Synthesis and optical properties of Co2+-doped ZnGa2O4 nanocrystals[J]. J Cryst Growth, 2006, 296(2): 234–238.

[23] [23] KUMAR SINGH A, CHEN P W, WUU D S. Growth and characterization of co-sputtered Al-doped ZnGa2O4 films for enhancing deep-ultraviolet photoresponse[J]. Appl Surf Sci, 2021, 566: 150714.

[24] [24] RISBUD A S, SESHADRI R, ENSLING J, et al. Dilute ferrimagnetic semiconductors in Fe-substituted spinel ZnGa2O4[J]. J Phys: Condens Matter, 2005, 17(6): 1003–1010.

[25] [25] LU X C, BIAN W J, LI Y Y, et al. Cation distributions and microwave dielectric properties of Cu-substituted ZnGa2O4 spinel ceramics[J]. Ceram Int, 2017, 43(16): 13839–13844.

[26] [26] ZERARGA F, BOUHEMADOU A, KHENATA R, et al. Structural, electronic and optical properties of spinel oxides ZnAl2O4, ZnGa2O4 and ZnIn2O4[J]. Solid State Sci, 2011, 13(8): 1638–1648.

[27] [27] GALAZKA Z, GANSCHOW S, SCHEWSKI R, et al. Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals[J]. 2018, 7(2): 022512.

[28] [28] BOY J, HANDWERG M, MITDANK R, et al. Charge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals[J]. 2020, 10(5): 055005.

[29] [29] CHI Z, TARNTAIR F G, FRGNAUX M, et al. Bipolar self-doping in ultra-wide bandgap spinel ZnGa2O4[J]. Mater Today Phys, 2021, 20: 100466.

[30] [30] FU B, JIAN G Z, MU W X, et al. Crystal growth and design of Sn-doped -Ga2O3: Morphology, defect and property studies of cylindrical crystal by EFG[J]. J Alloys Compd, 2022, 896: 162830.

[31] [31] WANG B, WANG H, TU B T, et al. Optical transmission, dispersion, and transition behavior of ZnGa2O4 transparent ceramic[J]. J Am Ceram Soc, 2023, 106(2): 1230–1239.

[32] [32] LI N N, DUAN X L, YU F P, et al. Effects of preparation method and temperature on the cation distribution of ZnGa2O4 spinel studied by X-ray photoelectron spectroscopy[J]. Vacuum, 2017, 142: 1–4.

[33] [33] DUAN X L, YU F P, WU Y C. Microstructure and optical properties of CoxZn1–xGa2O4 (0≤x≤1) nanoparticles[J]. Eur J Inorg Chem, 2013, 2013(8): 1287–1293.

[34] [34] GALAZKA Z, IRMSCHER K, SCHEWSKI R, et al. Czochralski-grown bulk -Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions[J]. J Cryst Growth, 2020, 529: 125297.

[35] [35] O’DONOGHUE R, RECHMANN J, AGHAEE M, et al. Low temperature growth of gallium oxide thin filmsviaplasma enhanced atomic layer deposition[J]. Dalton Trans, 2017, 46(47): 16551–16561.

[36] [36] SUZUKI N, OHIRA S, TANAKA M, et al. Fabrication and characterization of transparent conductive Sn-doped -Ga2O3 single crystal[J]. Phys Status Solidi C, 2007, 4(7): 2310–2313.

[37] [37] YAMAGA M, VLLORA E G, SHIMAMURA K, et al. Donor structure and electric transport mechanism in -Ga2O3[J]. Phys Rev B, 2003, 68(15): 155207.