Chaos Generation in Semiconductor Laser with Random Digital Optical Injection

Xiaohui Peng; Yicheng Du; Hua Gao; Longsheng Wang; Anbang Wang

doi:10.3788/AOS202242.2214001

Acta Optica Sinica, Volume. 42, Issue 22, 2214001(2022)

Chaos Generation in Semiconductor Laser with Random Digital Optical Injection

Xiaohui Peng^1,2, Yicheng Du^1,2, Hua Gao^1,2, Longsheng Wang^1,2, and Anbang Wang^1,2、*

¹Key Laboratory of Advanced Transducers and Intelligent Control System, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, Shanxi , China

²College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, Shanxi , China

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Figures & Tables(8)

Fig. 1. Simulation model of random digital phase modulated optical signal injected into DFB laser

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Fig. 2. Typical output characteristics of DFB laser after injection of RDPM optical signals with different modulation rates at $φ_{m} = 0.5 π$ and $t' = 0.21 n s$ . (a1)-(a4) Continuous light; (b1)-(b4) $f_{m} = 1 G b / s$ ; (c1)-(c4) $f_{m} = 2 G b / s$ ; (d1)-(d4) $f_{m} = 4 G b / s$ ; (e1)-(e4) $f_{m} = 16 G b / s$

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Fig. 3. Calculation results of correlation dimension of laser output signals with different modulation rates. (a) $f_{m} = 2 G b / s$ ; (b) $f_{m} = 4 G b / s$ ; (c) $f_{m} = 16 G b / s$

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Fig. 4. Typical output characteristics of DFB laser after injection of RDPM optical signal with different modulation depths at $f_{m} = 16 G b / s$ and $t' = 0.21 n s$ . (a1)-(a4) $φ_{m} = 0.05 π$ ; (b1)-(b4) $φ_{m} = 0.17 π$ ; (c1)-(c4) $φ_{m} = 0.80 π$

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Fig. 5. Numerical simulation of state diagram of DFB laser after introducing RDPM optical signals with different modulation depths and modulation rates when injecting locked state

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Fig. 6. Spectra of chaotic signals generated by continuous optical injection and RDPM optical injection

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Fig. 7. Influence of phase modulation on signal bandwidth. (a) Effect of modulation rate on bandwidth at $φ_{m} = π$ ; (b) effect of modulation depth on bandwidth at $f_{m} = 10 G b / s$

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Table 1. Parameters of DFB semiconductor laser

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Table 1. Parameters of DFB semiconductor laser

Parameter	Symbol	Description
Transparent carrier concentration index /μm^-3	$N_{0}$	1.5×10⁶
Linewidth factor	$α$	3.0
Nonlinear gain coefficient /μm³	$G_{n}$	1×10^-5
Carrier concentration index /μm^-3	$N_{I}$	0.5×10⁶
Grating period /nm	$T_{g}$	200
Linear material gain coefficient /μm²	$G_{g}$	3×10^-8
Active section length /μm	$L$	350
Active section width /μm	$W$	2.5
Bandwidth of spontaneous emission noise /THz	$B_{n}$	10
Noise coefficient of spontaneous emission	$β$	1×10^-12
Group index	$n$	3.7
Bias current	$I$	$2.5 I_{t h}$

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Xiaohui Peng, Yicheng Du, Hua Gao, Longsheng Wang, Anbang Wang. Chaos Generation in Semiconductor Laser with Random Digital Optical Injection[J]. Acta Optica Sinica, 2022, 42(22): 2214001

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Paper Information

Category: Lasers and Laser Optics

Received: May. 16, 2022

Accepted: Jun. 4, 2022

Published Online: Nov. 7, 2022

The Author Email: Wang Anbang (wanganbang@tyut.edu.cn)

DOI:10.3788/AOS202242.2214001

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology