[1] Q. Cheng, M. Bahadori, M. Glick, S. Rumley, K. Bergman. Recent advances in optical technologies for data centers: a review. Optica, 5, 1354-1370(2018).

[2] B. Wang, Q. Huang, K. Chen, J. Zhang, G. Kurczveil, D. Liang, S. Palermo, M. R. Tan, R. G. Beausoleil, S. He. Modulation on silicon for datacom: past, present, and future. Prog. Electromagn. Res., 166, 119-145(2019).

[3] A. V. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, J. E. Cunningham. Computer systems based on silicon photonic interconnects. Proc. IEEE, 97, 1337-1361(2009).

[4] J. E. Bowers, T. Komljenovic, M. Davenport, J. Hulme, A. Y. Liu, C. T. Santis, A. Spott, S. Srinivasan, E. J. Stanton, C. Zhang. Recent advances in silicon photonic integrated circuits. Proc. SPIE, 9774, 977402(2016).

[5] T. Komljenovic, M. Davenport, J. Hulme, A. Y. Liu, C. T. Santis, A. Spott, S. Srinivasan, E. J. Stanton, C. Zhang, J. E. Bowers. Heterogeneous silicon photonic integrated circuits. J. Lightwave Technol., 34, 20-35(2016).

[6] C. Sun, M. T. Wade, Y. Lee, J. S. Orcutt, L. Alloatti, M. S. Georgas, A. S. Waterman, J. M. Shainline, R. R. Avizienis, S. Lin, B. R. Moss, R. Kumar, F. Pavanello, A. H. Atabaki, H. M. Cook, A. J. Ou, J. C. Leu, Y. H. Chen, K. Asanović, R. J. Ram, M. A. Popović, V. M. Stojanović. Single-chip microprocessor that communicates directly using light. Nature, 528, 534-538(2015).

[7] V. Stojanović, R. J. Ram, M. Popović, S. Lin, S. Moazeni, M. Wade, C. Sun, L. Alloatti, A. Atabaki, F. Pavanello, N. Mehta, P. Bhargava. Monolithic silicon-photonic platforms in state-of-the-art CMOS SOI processes [Invited]. Opt. Express, 26, 13106-13121(2018).

[8] . IEEE P802.3bs 400GbE.

[9] B. Wang, Z. Huang, W. V. Sorin, X. Zeng, D. Liang, M. Fiorentino, R. G. Beausoleil. A low-voltage Si-Ge avalanche photodiode for high-speed and energy efficient silicon photonic links. J. Lightwave Technol.(2019).

[10] G. Kurczveil, D. Liang, M. Fiorentino, R. G. Beausoleil. Robust hybrid quantum dot laser for integrated silicon photonics. Opt. Express, 24, 16167-16174(2016).

[11] J. C. Campbell. Recent advances in avalanche photodiodes. J. Lightwave Technol., 34, 278-285(2016).

[12] Y. Kang, H. D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. H. Kuo, H. W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, J. C. Campbell. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product. Nat. Photonics, 3, 59-63(2009).

[13] N. Duan, T.-Y. Liow, A. E.-J. Lim, L. Ding, G. Q. Lo. 310  GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550  nm light detection. Opt. Express, 20, 11031-11036(2012).

[14] Z. Huang, C. Li, D. Liang, K. Yu, C. Santori, M. Fiorentino, W. Sorin, S. Palermo, R. G. Beausoleil. 25  Gbps low-voltage waveguide Si–Ge avalanche photodiode. Optica, 3, 793-798(2016).

[15] M. Huang, P. Cai, S. Li, G. Hou, N. Zhang, T. I. Su, C. Y. Hong, D. Pan. 56 GHz waveguide Ge/Si avalanche photodiode. Optical Fiber Communications Conference and Exposition (OFC), W4D.6(2018).

[16] M. Ware, K. Rajamani, M. Floyd, B. Brock, J. C. Rubio, F. Rawson, J. B. Carter. Architecting for power management: the IBM® POWER7™ approach. International Symposium on High-Performance Computer Architecture, 1-11(2010).

[17] L. Virot, P. Crozat, J. M. Fédéli, J. M. Hartmann, D. Marris-Morini, E. Cassan, F. Boeuf, L. Vivien. Germanium avalanche receiver for low power interconnects. Nat. Commun., 5, 4957(2014).

[18] H. T. Chen, J. Verbist, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, B. Moeneclaey, X. Yin, J. Bauwelinck, J. Van Campenhout, G. Roelkens. 25-Gb/s 1310-nm optical receiver based on a sub-5-V waveguide-coupled germanium avalanche photodiode. IEEE Photon. J., 7, 7902909(2015).

[19] B. Wang, Z. Huang, X. Zeng, D. Liang, W. V. Sorin, M. Fiorentino, R. G. Beausoleil. 60  Gb/s PAM4 low-voltage waveguide Si-Ge avalanche photodiode. European Conference on Optical Communication (ECOC), Tu.1.E.4(2019).

[20] X. Zeng, Z. Huang, B. Wang, D. Liang, M. Fiorentino, R. G. Beausoleil. Silicon–germanium avalanche photodiodes with direct control of electric field in charge multiplication region. Optica, 6, 772-777(2019).

[21] J. W. Shi, F. M. Kuo, F. C. Hong, Y. S. Wu. Dynamic analysis of a Si/SiGe-based impact ionization avalanche transit time photodiode with an ultrahigh gain-bandwidth product. IEEE Electron Device Lett., 30, 1164-1166(2009).

[22] D. Dai, H.-W. Chen, J. E. Bowers, Y. Kang, M. Morse, M. J. Paniccia. Equivalent circuit model of a Ge/Si avalanche photodiode. 6th International Conference on Group IV Photonics, 1-3(2009).

[23] B. Wang, Z. Huang, X. Zeng, W. V. Sorin, D. Liang, M. Fiorentino, R. G. Beausoleil. A compact model for Si-Ge avalanche photodiodes over a wide range of multiplication gain. J. Lightwave Technol., 37, 3229-3235(2019).

[24] W. S. Zaoui, H.-W. Chen, J. E. Bowers, Y. Kang, M. Morse, M. J. Paniccia, A. Pauchard, J. C. Campbell. Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product. Opt. Express, 17, 12641-12649(2009).

[25] D. Dai, M. J. Rodwell, J. E. Bowers, Y. Kang, M. Morse. Derivation of the small signal response and equivalent circuit model for a separate absorption and multiplication layer avalanche photodetector. IEEE J. Sel. Top. Quantum Electron., 16, 1328-1336(2010).