Fig. 1. (Color online) Theoretical breakdown voltages of epi-layers with various thickness and doping concentration.

Fig. 2. (Color online) (a) Modeled FGR type edge termination structure. (b) E-field strength profiles comparison between P-well doped and P⁺ doped FGR type edge termination. Both data are extracted under breakdown statuses of the two terminations, respectively. Upper one corresponds to E-field at the depth of p–n junction and bottom one corresponds to E-field near the surface of the edge termination.

Fig. 3. Breakdown voltages of FGR with different spacing arrays.

Fig. 4. (Color online) (a) Specific on-resistance with and without additional JFET doping. (b) Electric field strength in gate oxide and specific on-resistance dependence on JFET width.

Fig. 5. (Color online) Doping regions of designed SiC MOSFET including P-well, N⁺, P⁺, and JFET regions.

Fig. 6. (Color online) Photo of fabricated 1.2 kV / 15 mΩ devices.

Fig. 7. (Color online) Breakdown voltages of PiN diodes with different FGR spacing arrays.

Fig. 8. (Color online) Current–voltage curves of various gate voltages.

Fig. 9. (Color online) Drain–source leakage current at V_GS = 0 V. The dashed red line represents V_DS = 1.5 kV.