Chinese Journal of Lasers, Volume. 51, Issue 17, 1706003(2024)

Near‐Field Simultaneous Measurement of Gallium Nitride Electroluminescence Spectrum and In‐Situ Temperature

Xiaoxue Kang1,2, Na Chen1,2、*, Shaoying Li1,2, Zhenmin Liu1,2, Shupeng Liu1,2, Yana Shang1,2, Wei Huang3, Hongliang Lu3, and Tingyun Wang1,2
Author Affiliations
  • 1Key Laboratory of Specialty Fiber Optics and Optical Access Networks, Shanghai University, Shanghai 200444, China
  • 2Joint International Research Laboratory of Specialty Fiber Optics and Advanced Communication, Shanghai University, Shanghai 200444, China
  • 3State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
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    References(33)

    [5] Rey A D L, Albrecht J D, Saraniti M. A π-shaped gate design for reducing hot-electron generation in GaN HEMTs[J]. IEEE Transactions on Electron Devices, 65, 4263-4270(2018).

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    Xiaoxue Kang, Na Chen, Shaoying Li, Zhenmin Liu, Shupeng Liu, Yana Shang, Wei Huang, Hongliang Lu, Tingyun Wang. Near‐Field Simultaneous Measurement of Gallium Nitride Electroluminescence Spectrum and In‐Situ Temperature[J]. Chinese Journal of Lasers, 2024, 51(17): 1706003

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    Paper Information

    Category: Fiber optics and optical communication

    Received: Nov. 24, 2023

    Accepted: Jan. 16, 2024

    Published Online: Aug. 29, 2024

    The Author Email: Na Chen (na.chen@shu.edu.cn)

    DOI:10.3788/CJL231436

    CSTR:32183.14.CJL231436

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