Study on the optical properties of VO<sub>2</sub> thin films under varied temperatures and the protection performance against 1550 nm laser

Jia-Xin DUAN; Lin JIANG; Guo-Bin ZHENG; Chang-Chun DING; Jing-Guo HUANG; Yi LIU; Yan-Qing GAO; Wei ZHOU; Zhi-Ming HUANG

doi:10.11972/j.issn.1001-9014.2024.02.002

Journal of Infrared and Millimeter Waves, Volume. 43, Issue 2, 150(2024)

Study on the optical properties of VO₂ thin films under varied temperatures and the protection performance against 1550 nm laser

Jia-Xin DUAN^1,2, Lin JIANG², Guo-Bin ZHENG², Chang-Chun DING¹, Jing-Guo HUANG², Yi LIU³, Yan-Qing GAO^2、*, Wei ZHOU^2、**, and Zhi-Ming HUANG^2、***

Author Affiliations

¹School of Science，Xihua University，Chengdu 610039，China

²Key Laboratory of Infrared Science and Technology，Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China

³Cixi Institute of Biomedical Engineering，Ningbo Institute of Materials Technology and Engineering，Chinese Academy of Sciences，Ningbo 315201，China

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Figures & Tables(6)

Fig. 1. （a） Schematic diagram of variable temperature ellipsometric tests for VO₂ thin film samples；（b） 1 550 nm transmission testing system for VO₂ thin film under variable irradiation powers

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$（a） AFM morphology of VO2 film prepared by annealing at 380 ℃；（b） AFM morphology of VO2 film prepared by annealing at 420 ℃；（c） X-ray diffraction test results at different annealing temperatures，scanning electron microscope cross-section of thin film sample；（d） test results of four-probe variable temperature resistivity of VO2 film prepared by annealing at 420 ℃$

Fig. 2. （a） AFM morphology of VO₂ film prepared by annealing at 380 $℃$ ；（b） AFM morphology of VO₂ film prepared by annealing at 420 $℃$ ；（c） X-ray diffraction test results at different annealing temperatures，scanning electron microscope cross-section of thin film sample；（d） test results of four-probe variable temperature resistivity of VO₂ film prepared by annealing at 420 $℃$

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Fig. 3. （a-b） Test results of Psi and Delta values at 30 $℃$ and 80 $℃$ ；（c-d） test results of Psi and Delta values under varied temperatures ranging between 20-100 $℃$ at a fixed incident degree of 65 °

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Fig. 4. （a-b） Changes of n and k values of VO₂ thin films at different temperatures

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Fig. 5. （a） The pattern of light spots with different powers converged on the sample surface；（b） the measured laser powers with/without VO₂ samples at different working currents；（c） the transmittance values of VO₂ under different infrared laser power densities；（d） the transmittance spectra of VO₂ films before and after the phase transition at 30 ℃ and 80 ℃

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Table 1. Diffraction peaks and crystallographic parameters
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Table 1. Diffraction peaks and crystallographic parameters
样品物相（h k l） $2 θ / (°)$ $B / (°)$ $D / n m$
340 °C VO₂ （ $\bar{3} 2 1$ ） 64.736° 0.902 11.6
380 °C VO₂ （ $\bar{3} 2 1$ ） 64.437° 0.910 9.7
420 °C VO₂ （ $\bar{3} 2 1$ ） 64.858° 1.00 10.5

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Jia-Xin DUAN, Lin JIANG, Guo-Bin ZHENG, Chang-Chun DING, Jing-Guo HUANG, Yi LIU, Yan-Qing GAO, Wei ZHOU, Zhi-Ming HUANG. Study on the optical properties of VO₂ thin films under varied temperatures and the protection performance against 1550 nm laser[J]. Journal of Infrared and Millimeter Waves, 2024, 43(2): 150

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