Journal of Inorganic Materials, Volume. 39, Issue 4, 345(2024)

Oxide Neuron Devices and Their Applications in Artificial Neural Networks

Zongxiao LI1, Lingxiang HU1, Jingrui WANG2, and Fei ZHUGE1,3,4,5、*
Author Affiliations
  • 11. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • 22. School of Electronic and Information Engineering, Ningbo University of Technology, Ningbo 315211, China
  • 33. Center for Excellence in Brain Science and Intelligence Technology, Chinese Academy of Sciences, Shanghai 200031, China
  • 44. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100029, China
  • 55. Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
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    Figures & Tables(9)
    Typical structure and dynamic response of biological neuron
    Hodgkin-Huxley (HH) neuron based on VO2 memristors[32]
    Leaky integrate-and-fire (LIF) neuron based on antiferroelectric field effect transistor[43]
    LIF neuron based on an antiferromagnetic spintronic device[51]
    Researches of LIF neurons based on oxide memristors
    Coupling circuits of oscillation neurons and the output mutual waves
    Researches on hardware implementations of spiking neural network (SNN) based on oxide neurons
    VO2 oscillator-based oscillatory neural network (ONN) for Ising Hamiltonian solver[121]
    • Table 1. Performance comparison of HH, LIF and oscillation neurons based on oxides

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      Table 1. Performance comparison of HH, LIF and oscillation neurons based on oxides

      TypeDevice structurePhysicsAuxiliarycircuit Operation stimulusHighest output frequencyEnergy consumption per spikeAdvanced functionRef.
      HHPt/VO2/PtMott2S2R2C*2S1R3C*2S2R3C*Current/Voltage<60 kHz5.6 fJ23 types of biologicalneuronal behaviors[32]
      W/WO3/PEDOT:PSS/PtProton migrationCMOS2 VLocal graded potential, all or nothing[34]
      LIFSi:HfO2-based FeFETPolarization switching6T*2.4 VIntegration of excitatoryand inhibitory inputs[42]
      Hf0.5Zr0.5O2-based FeFETPolarization switching5T1C*1.8 VSpike frequency adaptation[44]
      Hf0.2Zr0.8O2-based FeFETPolarization switching6T1R*1.8 V37 fJAdjustable output frequency[43]
      MTJSpin1T*17 MHz486 fJAdjustable output frequency[51]
      Pt/Ag/TiN/HfAlOx/PtFilament2R1C*1.5 V16 fJAdjustable output frequency[111]
      Ag/SiO2/SiO2.03/PtFilament2R1C*0.1 V2 fJAdjustable output frequency[79]
      Au/VO2/AuMott2R1C*5 V1 MHz2.9 nJAdjustable output frequency[112]
      Si/NbO2/TiNMott1R*2 V900 kHz38 pJSelf-protection[110]
      OscillationPt/TaOx/Ta/PtFilament1R1C*4-6V250 MHz300 μWAdjustable output frequency[105]
      Ag/HfOx/PtFilament1R*0.6 V~80 kHz1.8 µWAdjustable output frequency[113]
      Pt/NbOx/PtMott1R1C*4 V33 MHzAdjustable output frequency[94]
      VO2Mott1R1C*2.5 V1 MHz735 mWCoupling[114]
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    Zongxiao LI, Lingxiang HU, Jingrui WANG, Fei ZHUGE. Oxide Neuron Devices and Their Applications in Artificial Neural Networks[J]. Journal of Inorganic Materials, 2024, 39(4): 345

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    Paper Information

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    Received: Sep. 5, 2023

    Accepted: --

    Published Online: Jul. 8, 2024

    The Author Email: Fei ZHUGE (zhugefei@nimte.ac.cn)

    DOI:10.15541/jim20230405

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