Journal of Synthetic Crystals, Volume. 54, Issue 3, 386(2025)

Comparative Study on Thermal Field of Ga2O3 Single Crystal Growth Simulated by Different Thermal Radiation Models

YIN Changshuai1, MENG Biao2, LIANG Kang1, CUI Hanwen1, LIU Sheng1, and ZHANG Zhaofu1、*
Author Affiliations
  • 1The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
  • 2JFS Laboratory, Wuhan 430206, China
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    High-quality gallium oxide (Ga2O3) single crystals were grown using the edge-defined film-fed growth method (EFG method), with the radiation heat transfer inside the furnace significantly impacting the temperature field distribution and stress distribution during the crystal growth process. Therefore, this study uses different finite element methods to analyze the three-dimensional thermal field distribution of Ga2O3 single crystal growth under three different radiation models, including the Rosseland method, the P1 approximation method, and the discrete ordinates method (DOM). A thermoelastic stress model is used to solve the stress distribution within the crystal under different heat flux conditions. Numerical simulation results indicate significant differences in the thermal field calculations under different radiation models. With the same heating power, the Rosseland radiation model has the smallest temperature gradient at the solid-liquid interface, while DOM has the largest temperature gradient. Under the same heat flux, the DOM radiation model exhibits the highest thermal stress during the early cooling stage, while the Rosseland model shows the highest thermal stress during the final cooling stage. Under varying heat flux conditions, the Rosseland radiation model displays the most significant changes in stress and temperature. This research provides theoretical guidance for the thermal field design in single crystal growth for gallium oxide and other related materials.

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    YIN Changshuai, MENG Biao, LIANG Kang, CUI Hanwen, LIU Sheng, ZHANG Zhaofu. Comparative Study on Thermal Field of Ga2O3 Single Crystal Growth Simulated by Different Thermal Radiation Models[J]. Journal of Synthetic Crystals, 2025, 54(3): 386

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    Paper Information

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    Received: Nov. 15, 2024

    Accepted: Apr. 23, 2025

    Published Online: Apr. 23, 2025

    The Author Email: ZHANG Zhaofu (zhaofuzhang@whu.edu.cn)

    DOI:10.16553/j.cnki.issn1000-985x.2024.0292

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