[1] P Bhattacharya, K Kamath, J Singh et al. In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties. IEEE Trans Electron Devices, 46, 871(2017).

[2] D. Bimberg. Quantum dots for lasers, amplifiers and computing. J Phys D, 38, 2055(2005).

[3] K A Sablon, J W Little, V Mitin et al. Strong enhancement of solar cell efficiency due to quantum dots with built-in charge. Nano Lett, 11, 2311(2011).

[4] V P Deviprasad, H Ghadi, D Das et al. High performance short wave infrared photodetector using p –i –p quantum dots (InAs/GaAs) validated with theoretically simulated model. J Alloys Compd, 804, 18(2019).

[5] O Karni, K J Kuchar, A Capua et al. Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers. Appl Phys Lett, 104, 121104(2014).

[6] Y Ebiko, S Muto, D Suzuki et al. Island size scaling in InAs/GaAs self-assembled quantum dots. Phys Rev Lett, 80, 2650(1998).

[7] Z Y Zhang, R A Hogg, X Q Lv et al. Self-assembled quantum-dot superluminescent light-emitting diodes. Adv Opt Photonics, 2, 201(2010).

[8] Z Z Sun, D Ding, Q Gong et al. Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum. Opt Quantum Electron, 31, 1235(1999).

[9] N Ozaki, K Takeuchi, S Ohkouchi et al. Monolithically grown multi-color InAs quantum dots as a spectral-shape-controllable near-infrared broadband light source. Appl Phys Lett, 103, 051121(2013).

[10] W Li, S Chen, J Wu et al. The effect of post-growth rapid thermal annealing on InAs/InGaAs dot-in-a-well structure monolithically grown on Si. J Appl Phys, 125, 135301(2019).

[11] S Sengupta, N Halder, S. Chakrabarti. Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness. Mater Res Bull, 45, 1593(2010).

[12] M Triki, S Jaziri, R. Bennaceur. Optical transitions of InAs/GaAs quantum dot under annealing process. J Appl Phys, 111, 104304(2012).

[13] S Saravanan, T. Harayama. Improvement in size distribution and optical properties of InAs/GaAs QDs by post growth thermal treatment. Phys Status Solidi B, 246, 725(2009).

[14] S Adhikary, S. Chakrabarti. A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In_0.50Ga_0.50As/GaAs quantum dot infrared photodetector with quaternary In_0.21Al_0.21Ga_0.58As capping. Mater Res Bull, 47, 3317(2012).

[15] S Adhikary, S. Chakrabarti. Spectral broadening due to post-growth annealing of a long-wave InGaAs/GaAs quantum dot infrared photodetector with a quaternary barrier layer. Thin Solid Films, 552, 146(2014).

[16] H S Djie, D N Wang, B S Ooi et al. Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing. Thin Solid Films, 515, 4344(2007).

[17] M Rossetti, L Li, A Markus et al. Characterization and modeling of broad spectrum InAs–GaAs quantum-dot superluminescent diodes emitting at 1.2–1.3 μm. IEEE J Quantum Electron, 43, 676(2007).

[18] U H Lee, Y D Jang, H Lee et al. The energy level spacing between the ground and first excited states in InAs/GaAs quantum dots as a measure of the zero dimensionality. Physica E, 17, 129(2003).

[19] K Ghosh, S Kundu, N Halder et al. Annealing of In_0.45Ga_0.55As/ GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devices. Solid State Commun, 151, 1394(2011).

[20] J S Kim, J H Lee, S U Hong et al. Structural and optical properties of shape-engineered InAs quantum dots. J Appl Phys, 94, 2486(2003).

[21] A Agarwal, M Srujan, S Chakrabarti et al. Investigation of thermal interdiffusion in InAs/In_0.15Ga_0.85As/GaAs quantum dot-in-a-well heterostructures. J Lumin, 143, 96(2013).

[22] S Shah, K Ghosh, S Jejurikar et al. Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperature. Mater Res Bull, 48, 2933(2013).

[23] W Lei, Y H Chen, Y L Wang et al. Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness. J Cryst Growth, 284, 20(2005).

[24] A Babiński, J Jasiński, R Bożek et al. Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap. Appl Phys Lett, 79, 2576(2001).