Journal of Synthetic Crystals, Volume. 54, Issue 4, 569(2025)
Effect of C/Si Ratio on SiC Fast Homoepitaxial Growth in Vertical Hot-Wall CVD Reactor
Figures & Tables(0)
Tools
Get Citation
Copy Citation Text
CHEN Danying, YAN Long, LUO Jiahao, ZHENG Zhenyu, JIANG Yong, ZHANG Kai, ZHOU Ning, LIAO Chenzi, GUO Shiping. Effect of C/Si Ratio on SiC Fast Homoepitaxial Growth in Vertical Hot-Wall CVD Reactor[J]. Journal of Synthetic Crystals, 2025, 54(4): 569
Paper Information
Category:
Received: Oct. 15, 2024
Accepted: Jun. 5, 2025
Published Online: Jun. 5, 2025
The Author Email: GUO Shiping (shipingguo@amecnsh.com)
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20