[1] [1] D. Lin,S. Huang,Y. Chen et al.. Ta-rich tantalum silicide nano-cluster diffusion barrier in ULSI metallization[C]. The 6th International Conference on Solid-State and Integrated-Circuit Technology,2001,1:497-500

[2] [2] L. J. Chen. Metal silicides:an integral part of microelectronics[J]. JOM J. the Minerals,Metals and Materials Society,2005,57(9):24-30

[3] [3] T. Morimoto,T. Ohguro,H. S. Momose et al.. Self-aligned nickel mono silicide technology for high-speed deep-submicrometer logic CMOS ULSI[J]. IEEE T. Electron. Dev.,1995,42(5):915-922

[4] [4] M. Stevens,Z. He,D. J. Smith et al.. Structure and orientation of epitaxial titanium silicide nanowires determined by electron microdiffraction[J]. J. Appl. Phys.,2003,93(9):5670-5674

[5] [5] J. Y. Yew,H. C. Tseng,L. J. Chen et al.. Formation of self-aligned CoSi2 on selective epitaxial growth silicon layer on (001) Si inside 0.1-0.6 μm oxide openings prepared by electron beam lithography[J]. Appl. Phys. Lett.,1996,69(24):3692-3694

[6] [6] J. Kim,J. Yang,J. Lee et al.. Memory characteristics of cobalt-silicide nanocrystals embedded in HfO2 gate oxide for nonvolatile nanocrystal flash devices[J]. Appl. Phys. Lett.,2008,92(1):013512

[7] [7] W. Chen,T. Chang,P. Lin et al.. Formation of stacked Ni silicide nanocrystals for nonvolatile memory application[J]. Appl. Phys. Lett.,2007,90(11):112108

[8] [8] S. Murase,T. Sunohara,T. Suemasu. Epitaxial growth and luminescence characterization of Si/beta-FeSi2/Si multilayered structures by molecular beam epitaxy[J]. J. Cryst. Growth,2007,301-302:676-679

[9] [9] M. Tanaka,S. Kurita,M. Fujisawa et al.. Optical properties of single-crystal TaSi2 in the photon-energy range 0.6-20 eV[J]. Phys. Rev. B,1992,46(16):10442-10445

[10] [10] J. Kim,D. Shindo,Y. Murakami et al.. Direct observation of field emission in a single TaSi2 nanowire[J]. Nano Lett.,2007,7(8):2243-2247

[11] [11] Y. L. Chueh,L. J. Chou,S. L. Cheng et al.. Synthesis and characterization of metallic TaSi2 nanowires[J]. Appl. Phys. Lett.,2005,87(22):223113

[12] [12] Y. Chueh,M. Ko,L. Chou et al.. TaSi2 nanowires:a potential field emitter and interconnect[J]. Nano Lett.,2006,6(8):1637-1644

[13] [13] G. H. Yu,T. Yang,F. W. Zhu et al.. Study of the SiO2/Ta interface in magnetic multilayers prepared by magnetron sputtering[C]. The 8th International Conference on Electronic Materials,2002,777-788

[14] [14] Liu Yaodong,Zhao Lei. Preparation of ZnO thin films by pulsed laser deposition[J]. Chinese J. Lasers,2007,34(4):534-537

[15] [15] Zhao Yan,Jiang Yijian. Spectroscopy properties of ZnO nanoparticles by pulsed laser ablation[J]. Chinese J. Lasers,2007,34(s1):206-209

[16] [16] Li Yanli,Liu Jingwang,Zhang Rongmei et al.. Relation between size-uniformity of Si nanoparticles and oscillating stabilization time of the mixed region during laser ablation[J]. J. Hebei University (Natural Science Edition),2005,25(5):478-481

[17] [17] X. Zhao,N. P. Magtoto,M. Leavy et al.. Copper interaction with a tantalum silicate surface:implications for interconnect technology[J]. Thin Solid Films,2002,415(1-2):308-314

[18] [18] C. D. Wagner,G. E. Muilenberg. Handbook of X-ray Photoelectron Spectroscopy:a Reference Book of Standard Data for Use in X-ray Photoelectron Spectroscopy[M]. USA:Perkin-Elmer,1979,190

[19] [19] S. Kohli,P. R. McCurdy,C. D. Rithner et al.. X-ray characterization of oriented β-tantalum films[J]. Thin Solid Films,2004,469-470:404-409

[20] [20] Wu Xinglong,Gu Yi,Bao Ximao. Preparation of nanoscale β-SiC quantum dot array[J]. The Chinese J. Process Engineering,2002,2(4):301-304

[21] [21] M. Zier,S. Oswald,R. Reiche et al.. XPS investigations of thin tantalum films on a silicon surface[J]. Anal. Bioanal. Chem.,2003,375(7):902-905

[22] [22] N. H. Turner,J. A. Schreifels. Surface analysis:X-ray photoelectron spectroscopy and auger electron spectroscopy[J]. Anal. Chem.,2000,72(12):99-110

[23] [23] J. H. Weaver,V. L. Moruzzi,F. A. Schmidt. Experimental and theoretical band-structure studies of refractory metal silicides[J]. Phys. Rev. B,1981,23(6):2916-2922