Development of Precise 3D Mask Model with Reduced Runtime for Lithography

Fig. 2. 3D mask transmission function varying with the incidence of the source. (a) Normal incidence; (b) 5° incidence; (c) 10° incidence; (d) 15° incidence

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Fig. 3. Simulated result of 3D FDTD mask near field under wave vector $k = (0.9512,0.1677, - 0.2588)$ and $E_{z}$ polarization

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Fig. 4. Simulated result of 3D FDTD mask near field under wave vector $k_{2} = (0.9512,0.0159, - 0.3080)$ and $E_{y}$ polarization

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Fig. 5. Simulated result of 3D FDTD mask near field under wave vector $k_{2} = (0.9512,0.0159, - 0.3080)$ and $E_{z}$ polarization

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Fig. 6. Simulated result of 3D FDTD mask near field under $k_{2} = (0.9512,0.0159, - 0.3080)$ and $E_{y}$ and $E_{z}$ polarization superposition

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Fig. 7. Comparison of the near fields of edges generated by the three methods

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Han Bao, Yong Zhang. Development of Precise 3D Mask Model with Reduced Runtime for Lithography[J]. Acta Optica Sinica, 2023, 43(13): 1320004

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Paper Information

Category: Optics in Computing

Received: Dec. 21, 2022

Accepted: Mar. 8, 2023

Published Online: Jul. 12, 2023

The Author Email: Zhang Yong (zhangyong@siat.ac.cn)

DOI:10.3788/AOS222165

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology