High-performance silicon arrayed-waveguide grating (de)multiplexer with 0.4-nm channel spacing

Xiaowan Shen; Weike Zhao; Huan Li; Daoxin Dai

doi:10.1117/1.APN.3.3.036012

Advanced Photonics Nexus, Volume. 3, Issue 3, 036012(2024)

High-performance silicon arrayed-waveguide grating (de)multiplexer with 0.4-nm channel spacing

Xiaowan Shen, Weike Zhao, Huan Li, and Daoxin Dai^*

Zhejiang University, College of Optical Science and Engineering, State Key Laboratory for Modern Optical Instrumentation, Hangzhou, China

show less

Figures & Tables(8)

Fig. 1. (a) Schematic configuration of the proposed silicon AWG, (b) the partial magnification of the SETR, and (c) the cross section.

Download full size

View in Article

Fig. 2. Calculation of the ratio of the ${TE}_{0}$ mode power when choosing (a) different waveguide widths $w_{1}$ , (b) different taper lengths $L_{1}$ , and (c) different taper lengths $L_{2}$ .

Download full size

View in Article

Fig. 3. (a) Stimulated optical field distribution of the FPR and the SETR, (b) stimulated optical field distribution of the SETR (part), (c) the coupling coefficient: the amplitude distribution, and (d) excess loss and crosstalk of the first FPR and the SETR when light is launched from the center input port.

Download full size

View in Article

Fig. 4. (a) Stimulated spectral responses of all 32 channels of the designed AWG. Stimulated light propagation in the second FPR for (b) the center channel and (c) the edge channel.

Download full size

View in Article

Fig. 5. (a) Microscope image of the fabricated $32 \times 32$ AWG, (b) microscope image of the fabricated SETR, (c) microscope image of the fabricated input/output tapers, (d) the scanning electron microscope image of the SETR, and (e) the scanning electron microscope image of the input/output tapers.

Download full size

View in Article

Fig. 6. (a) Measured spectral responses of all output ports, (b) the edge output port (#1), and (c) the central output port (#1). Here, light is launched from the central input port (#17).

Download full size

View in Article

Table 1. Parameters of the designed AWG device.
View table
View in Article
Table 1. Parameters of the designed AWG device.
Parameter $N$ $Δ λ_{ch}$ (nm) $λ_{0}$ (nm) $m$ $L_{FPR}$ ( $μ m$ ) $d_{g}$ ( $μ m$ ) $d_{o}$ ( $μ m$ ) $Δ L$ ( $μ m$ ) FSR (nm)
Value 32 0.4 1550 80 200 1.6 1.84 43.84 14.6

Table 2. Comparison of reported SOI AWGs.

View table

View in Article

Table 2. Comparison of reported SOI AWGs.


Ref.	Channel spacing (nm)	Channel number	FSR (nm)	Excess loss (dB)	Crosstalk (dB)	Footprint ( $μ m \times μ m$ )
17	3.2	16	51.2	3	−19	475×330
11	3.2	16	54	1.5	−26	530×435
10	3.2	12	69.8	0.5	−21.3	380×330
18	2.0	4	8	3.5	−12	425×125
10	2.0	8	24.8	1.3	−19.7	540×320
19	1.6	16	25.3	2.2	−20	500×200
11	1.6	16	29	2	−22.5	920×446
20	1.6	16	24.5	3.5	−16	1200×1000
8	1.6	16	25.8	3	−16	—
21	1.6	16	25.6	2.2	−8	580×170
22	1.6	16	25.6	1.45	−15.4	670×370
12	1.6	16	28.9	2.2	−31.7	600×800
10	0.8	4	6.9	2.5	−17.1	1180×285
23	0.7	64	45	5	−10	2300×2000
13	0.2	512	—	45	−4	16,000×11,000
This work	0.4	32	14.7	0.65	−21.4	900×2200

Tools

Get Citation

Copy Citation Text

Xiaowan Shen, Weike Zhao, Huan Li, Daoxin Dai, "High-performance silicon arrayed-waveguide grating (de)multiplexer with 0.4-nm channel spacing," Adv. Photon. Nexus 3, 036012 (2024)

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites