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Frontiers of Optoelectronics, Volume. 5, Issue 1, 7(2012)

Highly efficient silicon light emitting diodes produced by doping engineering

Jiaming SUN1、*, M. HELM2, W. SKORUPA2, B. SCHMIDT2, and A. MüCKLICH2
Author Affiliations
  • 1Key Laboratory of Weak Light Nonlinear Photonics Ministry of Education, Nankai University, Tianjin 300071, China
  • 2Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01314, Germany
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    Jiaming SUN, M. HELM, W. SKORUPA, B. SCHMIDT, A. MüCKLICH. Highly efficient silicon light emitting diodes produced by doping engineering[J]. Frontiers of Optoelectronics, 2012, 5(1): 7

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    Paper Information

    Received: Oct. 15, 2011

    Accepted: Nov. 17, 2011

    Published Online: Sep. 10, 2012

    The Author Email: Jiaming SUN (jmsun@nankai.edu.cn)

    DOI:10.1007/s12200-012-0226-5

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology