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Laser & Optoelectronics Progress, Volume. 51, Issue 3, 32301(2014)

Research on Efficiency Improvement of InGaN Light-Emitting Diodes with InGaN/GaN Superlattice Barrier

Yang Guofeng*, Zhu Huaxin, Guo Ying, Li Guohua, and Gao Shumei
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    Article index updated: Oct. 6, 2025

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    Yang Guofeng, Zhu Huaxin, Guo Ying, Li Guohua, Gao Shumei. Research on Efficiency Improvement of InGaN Light-Emitting Diodes with InGaN/GaN Superlattice Barrier[J]. Laser & Optoelectronics Progress, 2014, 51(3): 32301

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    Paper Information

    Category: Optical Devices

    Received: Oct. 22, 2013

    Accepted: --

    Published Online: Mar. 3, 2014

    The Author Email: Yang Guofeng (gfyang@jiangnan.edu.cn)

    DOI:10.3788/lop51.032301

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology