Journal of Infrared and Millimeter Waves, Volume. 39, Issue 6, 667(2020)

Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers

Ye YUAN1,2, Xiang-Bin SU1,2, Cheng-ao YANG1,2, Yi ZHANG1,2, Jin-Ming SHANG1,2, Sheng-Wen XIE1,2, Yu ZHANG1,2、*, Hai-Qiao NI1,2, Ying-Qiang XU1,2, and Zhi-Chuan NIU1,2,3,4
Author Affiliations
  • 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing100083, China
  • 2Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing100049, China
  • 3Beijing Academy of Quantum Information Sciences, Beijing100193, China
  • 4Laboratory of Solid Quantum Material Center, College of Physics and Electronic Engineering, Shanxi University, Taiyuan030006, China
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    Figures & Tables(6)
    The structure of the QD laser and the structure of the active region
    PL spectrum of the three QDs samples with growth temperature of 510℃,520℃ and 530℃
    Atomic force microscope (AFM)image of the three QDs samples (a)510 ℃,(b)520 ℃, and (c)530 ℃)
    P-I-V and WPE characteristics of the laser at CW mode
    Lasing spectrum at RT (The central wavelength is 1.3 μm)
    The power-current(P-I) characteristics in different temperature (5∼80℃) and the fitting curve between threshold current and temperature
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    Ye YUAN, Xiang-Bin SU, Cheng-ao YANG, Yi ZHANG, Jin-Ming SHANG, Sheng-Wen XIE, Yu ZHANG, Hai-Qiao NI, Ying-Qiang XU, Zhi-Chuan NIU. Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers[J]. Journal of Infrared and Millimeter Waves, 2020, 39(6): 667

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    Paper Information

    Category: Materials and Devices

    Received: Feb. 15, 2020

    Accepted: --

    Published Online: Jan. 20, 2021

    The Author Email: Yu ZHANG (zhangyu@semi.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2020.06.001

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