Journal of Infrared and Millimeter Waves, Volume. 39, Issue 6, 667(2020)
Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers
Fig. 1. The structure of the QD laser and the structure of the active region
Fig. 2. PL spectrum of the three QDs samples with growth temperature of 510℃,520℃ and 530℃
Fig. 3. Atomic force microscope (AFM)image of the three QDs samples (a)510 ℃,(b)520 ℃, and (c)530 ℃)
Fig. 6. The power-current(
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Ye YUAN, Xiang-Bin SU, Cheng-ao YANG, Yi ZHANG, Jin-Ming SHANG, Sheng-Wen XIE, Yu ZHANG, Hai-Qiao NI, Ying-Qiang XU, Zhi-Chuan NIU. Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers[J]. Journal of Infrared and Millimeter Waves, 2020, 39(6): 667
Category: Materials and Devices
Received: Feb. 15, 2020
Accepted: --
Published Online: Jan. 20, 2021
The Author Email: Yu ZHANG (zhangyu@semi.ac.cn)