Chinese Optics Letters, Volume. 21, Issue 4, 041405(2023)
Room-temperature continuous-wave InP-based 2.01 µm microcavity lasers in whispering-gallery modes with InGaAsSb quantum well
Fig. 1. Scanning electron microscope image of the notched elliptical resonator. The white line is the cavity boundary. The upper left inset shows the schematic illustration of the notched elliptical resonator. The right inset shows the smooth sidewall of the laser cavity and a detail of the cavity.
Fig. 2. Measured power-current-voltage characteristics for various heat sink temperatures during CW operation.
Fig. 3. CW spectra for various pumping currents at 15°C. The corresponding current tuning coefficient was −12.04 cm−1 A−1.
Fig. 4. Measured horizontal far-field profiles of microcavity lasers and Fabry–Perot lasers in pulsed-mode operation.
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Qiangqiang Guo, Jinchuan Zhang, Yixuan Zhu, Xu Gao, Quanyong Lu, Ning Zhuo, Shenqiang Zhai, Junqi Liu, Lijun Wang, Shuman Liu, Fengqi Liu, "Room-temperature continuous-wave InP-based 2.01 µm microcavity lasers in whispering-gallery modes with InGaAsSb quantum well," Chin. Opt. Lett. 21, 041405 (2023)
Category: Lasers, Optical Amplifiers, and Laser Optics
Received: Oct. 30, 2022
Accepted: Dec. 16, 2022
Published Online: Mar. 15, 2023
The Author Email: Jinchuan Zhang (zhangjinchuan@semi.ac.cn), Ning Zhuo (zhuoning@semi.ac.cn)