Fig. 1. Schematic of high-order waveguide mode interference lithography by continuously rotating sample

Fig. 2. Simulated optical field distribution of TE₅ waveguide mode interference for 1200-nm thickness photoresist

Fig. 3. Optical field distribution in photoresist after continuously rotating and exposing sample by interference field of TE₅. (a) Three-dimensional optical field distribution; (b) optical field distribution corresponding to Fig. 3(a) cutting from plane Y= 0 nm; (c) optical filed distribution of X-Y plane with Z=-300 nm in Fig. 3(a); (d) optical filed distribution of X-Z plane with Y= 0 nm in Fig. 3(a); (e) optical field intensity distribution along X-axis from -600 to 600 nm with Y= 0 nm and Z=-300 nm in Fig. 3(c); (f) optical field intensity distribution along Z-axis from-1200 to 0 nm with X= 0 nm and Y= 0 nm in Fig. 3(d)

Fig. 4. Optical field distribution in photoresist after continuously rotating and exposing sample by interference field of TM_51. (a) Three-dimensional optical field distribution; (b) optical field distribution corresponding to Fig. 4(a) cutting from plane Y= 0 nm; (c) optical filed distribution of X-Y plane with Z= 0 nm in Fig. 4 (a); (d) optical filed distribution of X-Z plane with Y= 0 nm in Fig. 4 (a); (e) optical field intensity distribution along X-axis from -1000 to 1000 nm with Y= 0 nm and Z= 0 nm in Fig. 4 (c); (f) optical field intensity distribution along Z-axis from -2000 to 0 nm with X= 0 nm and Y= 0 nm in Fig. 4(d)