Journal of Synthetic Crystals, Volume. 51, Issue 1, 3(2022)
Research Progress on the Growth of SiC Single Crystal via High Temperature Solution Growth Method
Figures & Tables(0)
Tools
Get Citation
Copy Citation Text
WANG Guobin, LI Hui, SHENG Da, WANG Wenjun, CHEN Xiaolong. Research Progress on the Growth of SiC Single Crystal via High Temperature Solution Growth Method[J]. Journal of Synthetic Crystals, 2022, 51(1): 3
Paper Information
Category:
Received: Sep. 6, 2021
Accepted: --
Published Online: Mar. 2, 2022
The Author Email: WANG Guobin (wangguobin18@mails.ucas.ac.cn)
CSTR:32186.14.
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20