Film thickness uniformity of deep ultraviolet large aperture aspheric mirror

Geometry	Trajectory
Coordinates of any point on the substrate holder	${x_{{p} } } = D\sin\; {\omega _1}t + \rho \sin \;({\omega _1}t + {\omega _2}t)$${y_{{p} } } = D\cos \;{\omega _1}t + \rho \cos\; \left( { {\omega _1}t + {\omega _2}t} \right)$${\textit{z}_p} = H$
Evaporation distance	$\sqrt { { {\left( { {x_{ {p} } } } \right)}^2} + { {\left( { {y_{ {p} } } - L} \right)}^2} + { {\left( { {\textit{z}_{ {p} } } } \right)}^2} }$
Evaporation angle	$\mathrm{cos}\;\varphi=\dfrac{\boldsymbol{D}\cdot\boldsymbol{PP_{{\rm{s}}} } }{\left\|\boldsymbol{D}\right\|\left\|\boldsymbol{PP_{{\rm{s}}} }\right\|}$
Projected angle	$\mathrm{cos}\;\theta =\dfrac{\boldsymbol{D}\cdot\boldsymbol{PP_{ {\rm{s} } } } }{\left\|\boldsymbol{D}\right\|\left\|\boldsymbol{PP_{ {\rm{s} } } }\right\|}$

Table 2. The technical parameters of the large aspherical mirror
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Table 2. The technical parameters of the large aspherical mirror
Parameters Indicators
Substrate JGS1
Angle of incidence /(°) 0
Spectral range /nm 230~300
Reflectance ≥97.5%
Heterogeneity ≤0.5%

Table 3. The process parameters of thin film preparation

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Table 3. The process parameters of thin film preparation

Material	Ion source voltage /V	Ion source current /mA	Ion source O₂ gas flow /ml·min⁻¹	O₂ gas flow /ml·min⁻¹	Substrate temperature/°C	Deposition rate /nm·s⁻¹
HfO₂	500	400	50	50	200	0.12
SiO₂	500	400	50	0	200	0.8

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Yong-gang PAN, Zhao-wen LIN, Ben WANG, Xiu-hua FU. Film thickness uniformity of deep ultraviolet large aperture aspheric mirror[J]. Chinese Optics, 2022, 15(4): 740

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Paper Information

Category: Original Article

Received: Jan. 6, 2022

Accepted: Apr. 6, 2022

Published Online: Sep. 6, 2022

The Author Email:

DOI:10.37188/CO.2022-0005

Topics

Table 1. The orbit of revolution of a planetary structure

Table 1. The orbit of revolution of a planetary structure

Table 2. The technical parameters of the large aspherical mirror

Table 2. The technical parameters of the large aspherical mirror

Table 3. The process parameters of thin film preparation

Table 3. The process parameters of thin film preparation