Optoelectronic Properties of CsPbX<sub>3</sub> (X=Cl, Br, I) Regulated by Pd Doping

MIN Yueqi; XIE Wenqin; XIE Liang; AN Kang

doi:10.16553/j.cnki.issn1000-985x.2024.0254

Journal of Synthetic Crystals, Volume. 54, Issue 4, 605(2025)

Optoelectronic Properties of CsPbX₃ (X=Cl, Br, I) Regulated by Pd Doping

MIN Yueqi¹, XIE Wenqin¹, XIE Liang^2、*, and AN Kang^1,3

Author Affiliations

¹School of Mechanical and Materials Engineering, North China University of Technology, Beijing 100144, China

²Department of Physics, North China University of Technology, Beijing 100144, China

³Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China

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MIN Yueqi, XIE Wenqin, XIE Liang, AN Kang. Optoelectronic Properties of CsPbX₃ (X=Cl, Br, I) Regulated by Pd Doping[J]. Journal of Synthetic Crystals, 2025, 54(4): 605

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Paper Information

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Received: Oct. 26, 2024

Accepted: Jun. 5, 2025

Published Online: Jun. 5, 2025

The Author Email: XIE Liang (xieliang@ncut.edu.cn)

DOI:10.16553/j.cnki.issn1000-985x.2024.0254

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology