Chinese Optics Letters, Volume. 23, Issue 6, 061601(2025)

39 Influence of defect anisotropy on luminescence properties in Pr:YAP crystals

Lu Zhang1,2, Bowen Jiang1,3, Mingyan Pan1、*, Weiguo Ji1,2, Qiming Fan1,2, Shaoqing Cui1,2, Ning Jia1, Qinglin Sai1, and Hongji Qi1,4、**
Author Affiliations
  • 1Advanced Laser and Optoelectronic Functional Materials Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2School of Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China
  • 4Hangzhou Institute of Optics and Fine Mechanics, Hangzhou 311400, China
  • show less
    Figures & Tables(9)
    Photograph of the as-grown Pr:YAP crystal grown by the Cz method.
    XRD pattern of the air-annealed Pr:YAP crystal.
    Raman spectra in (100), (010), and (001) planes of the Pr:YAP crystal, measured at room temperature within the range of 100–600 cm-1.
    Absorption spectra of the annealed Pr:YAP crystal at room temperature, measured on the (100), (010), and (001) planes.
    PL spectra (λex = 288 nm) of (100), (010), and (001) crystal plane samples excited by a xenon lamp.
    XEL spectra of the (100), (010), and (001) planes.
    TL spectra of the (100), (010), and (001) crystal planes.
    Relative intensities of the shallow defects and the Pr3+ 5d1 → 4f emission of the (100), (010), and (001) planes.
    • Table 1. TL Glow Peak Temperatures, the Integrated Intensities of TL Glow Peak, the Slopes of ln I Versus 1/T, and Its Corresponding Trap Depths

      View table
      View in Article

      Table 1. TL Glow Peak Temperatures, the Integrated Intensities of TL Glow Peak, the Slopes of ln I Versus 1/T, and Its Corresponding Trap Depths

      SampleTm (K)Integrate intensityE (eV)E* (eV)e-trap
      (100) plane3546.7950.3590.320YAl + VO
      42916.8790.1050.120VO + VY + 2YAl
      49120.7801.0331.015VO + VY + 2YAl
      (010) plane29827.0800.0650.047YAl + VY
      4577.5773.386VO-related
      (001) plane29436.0490.0400.047YAl + VY
      4619.3511.3611.407YAl + VO + VY
    Tools

    Get Citation

    Copy Citation Text

    Lu Zhang, Bowen Jiang, Mingyan Pan, Weiguo Ji, Qiming Fan, Shaoqing Cui, Ning Jia, Qinglin Sai, Hongji Qi, "39 Influence of defect anisotropy on luminescence properties in Pr:YAP crystals," Chin. Opt. Lett. 23, 061601 (2025)

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Optical Materials

    Received: Oct. 24, 2024

    Accepted: Jan. 21, 2025

    Published Online: May. 30, 2025

    The Author Email: Mingyan Pan (pmy@siom.ac.cn), Hongji Qi (qhj@siom.ac.cn)

    DOI:10.3788/COL202523.061601

    CSTR:32184.14.COL202523.061601

    Topics