Chinese Optics Letters, Volume. 23, Issue 6, 061601(2025)
39 Influence of defect anisotropy on luminescence properties in Pr:YAP crystals
Fig. 1. Photograph of the as-grown Pr:YAP crystal grown by the Cz method.
Fig. 3. Raman spectra in (100), (010), and (001) planes of the Pr:YAP crystal, measured at room temperature within the range of 100–600 cm-1.
Fig. 4. Absorption spectra of the annealed Pr:YAP crystal at room temperature, measured on the (100), (010), and (001) planes.
Fig. 5. PL spectra (λex = 288 nm) of (100), (010), and (001) crystal plane samples excited by a xenon lamp.
Fig. 8. Relative intensities of the shallow defects and the Pr3+ 5d1 → 4f emission of the (100), (010), and (001) planes.
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Lu Zhang, Bowen Jiang, Mingyan Pan, Weiguo Ji, Qiming Fan, Shaoqing Cui, Ning Jia, Qinglin Sai, Hongji Qi, "39 Influence of defect anisotropy on luminescence properties in Pr:YAP crystals," Chin. Opt. Lett. 23, 061601 (2025)
Category: Optical Materials
Received: Oct. 24, 2024
Accepted: Jan. 21, 2025
Published Online: May. 30, 2025
The Author Email: Mingyan Pan (pmy@siom.ac.cn), Hongji Qi (qhj@siom.ac.cn)