Photonics Research, Volume. 10, Issue 9, A106(2022)
Silicon photonics for high-capacity data communications
Figures & Tables(28)
![(a) Optical microscope and scanning electron microscope (SEM) photos of an eight-channel add-drop filter based on second-adiabatic elliptical-MRRs [18]; (b) micrograph of a cascaded MZI (de)multiplexer [20]; (c) optical micrographs of a bidirectional AWG and an MZI-based interleaver [4]; (d) SEM photos of a contradirectional coupler based on an apodized SWG [21].](/Images/icon/loading.gif){kind=icon}
Fig. 1. (a) Optical microscope and scanning electron microscope (SEM) photos of an eight-channel add-drop filter based on second-adiabatic elliptical-MRRs [18]; (b) micrograph of a cascaded MZI (de)multiplexer [20]; (c) optical micrographs of a bidirectional AWG and an MZI-based interleaver [4]; (d) SEM photos of a contradirectional coupler based on an apodized SWG [21].
Fig. 2. (a) SEM photos of a PBS based on grating-assisted contradirectional couplers [36]; (b) SEM photo of a cut-cornered polarization rotator [37]; (c) SEM photo of a PSR based on multimode waveguide and mode converter [38]; (d) micrographs of a PSR employing a nonlinearly tapered double-etched ADC structure [39].
Fig. 3. (a) SEM photo of a three-mode multiplexer based on a shallow-etched MMI [75]; (b) illustration of mode multiplexer using asymmetric Y junctions [68]; (c) micrographs of a 10-channel mode multiplexer based on ADC structures [70]; (d) photos of a 16-channel mode (de)multiplexer (
Fig. 4. Various configurations of carrier depletion PN junctions. (a) Lateral PN junction, (b) vertical PN junction, (c) L-shaped PN junction, (d) U-shaped PN junction, (e) interleaved PN junction, and (f) lateral PN junction with doping compensation.
Fig. 5. Schematic of silicon modulator. (a) MZM, (b) MRR modulator.
Fig. 8. Structure of the hybrid Si/LN MZM. (a) Schematic of the structure of the whole circuit; (b) schematic of the cross section of the hybrid waveguide; (c) SEM image of the cross section of the LN waveguide; (d) SEM image of the metal electrodes and the optical waveguide; (e) schematic of the VAC; (f) SEM images of the cross sections of the VAC at different positions (A, B, C) and calculated mode distributions associated with the cross sections.
Fig. 9. (a) Cross section (upper) and transverse field profile (lower) of a heterogeneous DFB laser design with an embedded spacer layer [194]. (b) Triple-ring mirror based tunable laser [195]: schematic illustration, SEM image of a Si/III–V taper, coarse tuning spectra showing the tuning range of 110 nm. (c)
Fig. 10. (a) Heterogeneous integration allows spectral coverage beyond the 1310 and 1550 nm telecom windows, with the shortest wavelength being 900 nm [198] and the longest wavelength being 4800 nm [199]. (b) Heterogeneous QD laser: schematic image (left) and simulated cross-sectional fundamental transverse-electric (TE) mode electrical field distributions (right). (c) Frequency noise spectrum of a heterogeneous QD laser showing that Lorentzian linewidth of 26 kHz is achieved [200].
Fig. 11. (a) Normal-incidence structure; waveguide-integrated structures: (b) butt-coupling, (c) bottom-up coupling, (d) top-down coupling, (e) side-coupling (top view) schemes.
Fig. 12. (a) Lateral homojunction, (b) lateral heterojunction, (c) vertical heterojunction PIN PDs.
Fig. 14. 400G DR4 transmitter with
Fig. 16. Integrated copackaged optical IO switch package with 16 photonic engines (PEs).
Fig. 17. Monolithic electronic-photonic systems based on a 65 nm transistor bulk CMOS process technology [296].
Fig. 18. Schematic configurations for single-mode networks (first column), multimode networks (second column), and ring-bus networks (third column). (a), (b) The single-mode carriers can be arbitrarily routed by leveraging MRR or Mach–Zehnder switch (MZS) arrays. (c), (d) For multimode operations, the fabrics can be constructed by assembling mode MUXs and a single-mode NoC. (e), (f) The ring-bus NoCs support multiple carriers transferring in a single ring-like bus waveguide, which can be realized by utilizing WDM or MDM technologies. NoC, network on chip; MRR, micro-ring resonator; MZS, Mach–Zehnder switch; MUX, (de)multiplexer; WDM, wavelength-division multiplexing; MDM, mode-division multiplexing; WADM, wavelength add-drop (de)multiplexer; MADM, mode add-drop (de)multiplexer.
Table 1. State-of-the-Art Wavelength Multiplexing Devices
a View tableView in ArticleTable 1. State-of-the-Art Wavelength Multiplexing Devices
a Reference Type Loss (dB) ER (dB) BW (nm) FSR/Spacing (nm) Channels [ 11 ]Submicrometer MRR 1.8 0.8 93 [ 16 ]Vernier racetrack / 10.2 / 37.52 [ 17 ]High-order MRR 2 50 0.008 0.4 [ 18 ]Elliptical MRR 1.5 45 1.4 3.2 [ 20 ]Cascaded MZI 1.6 15 / 2.4 [ 22 ]Two-stage MZI 0.4 13.6 5 14.7 [ 27 ]400 GHz AWG 3.29 17 / 3.2 [ 28 ]400 GHz AWG 2.32 20.5 / 3.2 [ 29 ]100 GHz AWG 2.45 17.1 / 0.8 [ 30 ]25 GHz AWG / 4 / 0.2 [ 31 ]5 15 / 0.8 [ 32 ]Asymmetric grating 0.58 10 / 3 [ 33 ]Multimode grating 0.5 24 6
Table 2. State-of-the-Art Polarization Management Devices
View tableView in ArticleTable 2. State-of-the-Art Polarization Management Devices
Reference Type Loss (dB) XT (dB) BW (nm) [ 36 ]Grating-assisted contra directional couplers 1 30 20 ( ) [ 38 ]Multimode waveguide 0.57 30.82 85 ( ) [ 34 ]Symmetrical DC 15 C-band ( ) [ 35 ]Asymmetric DC 30 100 ( ) [ 40 ]Cascaded bent DC 35 70 ( ) [ 41 ]Hetero-anisotropic metamaterials 200 ( ) [ 42 ]Pixelated DC 1.53 14.22 53 ( ) [ 46 ]-assisted mode evolution 1 30 60 ( ) [ 51 ]Mode-hybridization 2 17 40 ( ) [ 58 ]ADC 0.6 12 C-band ( ) [ 60 ]Bent DC 18 70 ( ) [ 61 ]Double-etched DC 0.5 20 30 ( )
Table 3. State-of-the-Art Mode Multiplexing Devices
View tableView in ArticleTable 3. State-of-the-Art Mode Multiplexing Devices
Reference Type Loss (dB) XT (dB) BW (nm) Channels [ 65 ]MMIs 28 C-band ( ) 3 [ 68 ]Y junctions 1.5 30 C-band ( ) 2 [ 70 ]ADCs 1.8 15 90 ( ) 10 [ 71 ]Plasmonic waveguide 0.35 17 100 ( ) 2 [ 72 ]Inverse design waveguide 8 20 80 ( ) 3 [ 73 ]MMIs and tapered phase shifter 1 37 60 ( ) 3 [ 74 ]MMIs 0.36 24.4 60 ( ) 3 [ 75 ]Shallow-etched MMI 2.4 10 70 ( ) 3 [ 76 ]SWGs 0.8–5.2 9.2–24 / 16 [ 79 ]Asymmetric Y junction / 34 300 ( ) 2 [ 82 ]Counter-tapered couplers 10 100 ( ) 2
Table 4. State-of-the-Art Couplers for Few-Mode Fiber Coupling
View tableView in ArticleTable 4. State-of-the-Art Couplers for Few-Mode Fiber Coupling
Reference Type Loss (dB) XT (dB) Channels [ 90 ]SiN-waveguide-assisted edge coupler a 6 [ 93 ]Triple-tip inverse taper 13.2 2 [ 91 ]Mode-evolution counter-tapers a 5.1 4 [ 92 ]SU8-waveguide-assisted edge coupler 5 / 4 [ 89 ]Subwavelength grating coupler 6.1 / 4
Table 5. State-of-the-Art Silicon Modulators
View tableView in ArticleTable 5. State-of-the-Art Silicon Modulators
Reference Type BW (GHz) IL (dB) Length (mm) Data Rate (Gb/s) [ 103 ]MZM 42.6 2.09 / 0.5 140 [ 131 ]MZM 47 1.35 5.4 2.5 225 [ 136 ]MZM 1.4 5.4 2 128 [ 137 ]MZM / 1.5 6.9 2.47 100 [ 167 ]MZM 47 1.4 5.4 2.5 305 [ 166 ]IQ-MZM 28 1.2 5.6 2 500 [ 112 ]MRM 50 0.52 / 0.01 b 128 [ 146 ]MRM 0.8 / 0.008 b 200 [ 147 ]MRM 77 0.53 / 0.006 b 192 [ 154 ]Push-pull MRM 42 / 14 a 0.015 b 144 [ 168 ]MRM 0.8 / 0.008 b 302 [ 169 ]PDM-MRM / / / 0.005 b 256 [ 145 ]PDM-MRM / / 1 0.01 b 260 [ 161 ]PhC modulator 38.6 / / 0.016 70
Table 6. State-of-the-Art Waveguide Si-Ge PIN Photodiodes
a View tableView in ArticleTable 6. State-of-the-Art Waveguide Si-Ge PIN Photodiodes
a Reference Type (μm) (V) (nA) R (A/W) BW (GHz) [ 242 ]VPIN 1.55 1 1.6 1.0 40 [ 244 ]VPIN 1.53 1 3 0.8 45 [ 231 ]LPIN 1.55 1 4000 0.8 120 [ 262 ]LPIN 1.55 1 100 1.0 70 [ 243 ]LPIN 1.55 1 4 0.74 67 [ 263 ]LPIN 1.55 2 200 0.3 265 100 0.45 240 [ 233 ]VPIN 1.55 2 3000 0.75 60 [ 246 ]VPIN 1.55 3 61 0.85 60 [ 261 ]VPIN 1.55 3 6.4 0.89 80 [ 248 ]LPIN 1.55 2 8 1.16 [ 254 ]LPIN 1.55 1 4 1.23 17 [ 253 ]LPIN 1.55 1 100 1.2 7
Table 7. State-of-the-Art Si–Ge APDs for High-Speed Optical Communications
a View tableView in ArticleTable 7. State-of-the-Art Si–Ge APDs for High-Speed Optical Communications
a Reference Type (μm) (V) (A/W) (nA) BW (GHz) GBP (GHz) BR (Gb/s) S at BER (dBm) [ 269 ]VSACM 1.31 25 0.55 1.24 11.5 340 10 at [ 267 ]MSM 1.31 3.5 0.4 – 39.5 300 10 at [ 270 ]VSACM 1.55 23 0.81 3 29.5 – 10 at [ 268 ]LPIN 1.55 7 0.4 20 11 190 10 at [ 271 ]VSACM 1.55 10 0.75 0.44 23 276 25 at [ 272 ]VSACM 1.31 18 0.7 0.4 26 – 25 at [ 273 ]VSACM 1.55 26.5 0.35 1 30 460 40 at [ 266 ]VSAM 1.55 6 0.48 1 18.9 284 25 at [ 274 ]VSACM 1.31 12 0.21 2 26 150 50 at [ 275 ]VPIN – 4.2 – – 40 – 112 at [ 264 ]LSACM 1.31 12 0.65 30 27 300 50 at [ 5 ]LPIN 1.55 12.5 0.95 10 33 240 64 at [ 276 ]VSACM 1.31 19.6 0.55 0.5 28 180 106 at
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Yaocheng Shi, Yong Zhang, Yating Wan, Yu Yu, Yuguang Zhang, Xiao Hu, Xi Xiao, Hongnan Xu, Long Zhang, Bingcheng Pan, "Silicon photonics for high-capacity data communications," Photonics Res. 10, A106 (2022)
Paper Information
Special Issue: NEXT-GENERATION SILICON PHOTONICS
Received: Feb. 25, 2022
Accepted: Jun. 2, 2022
Published Online: Aug. 19, 2022
The Author Email: Yaocheng Shi (yaocheng@zju.edu.cn)
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