Journal of Synthetic Crystals, Volume. 50, Issue 3, 416(2021)

Epitaxial Laterally Overgrown Free-Standing GaN through HVPE by Wide-Period Mask Method

CHEN Wangyibo1,2、*, XU Yu3, CAO Bing1,2, and XU Ke3
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    CHEN Wangyibo, XU Yu, CAO Bing, XU Ke. Epitaxial Laterally Overgrown Free-Standing GaN through HVPE by Wide-Period Mask Method[J]. Journal of Synthetic Crystals, 2021, 50(3): 416

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    Paper Information

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    Received: Jan. 17, 2021

    Accepted: --

    Published Online: Apr. 15, 2021

    The Author Email: Wangyibo CHEN (540112050@qq.com)

    DOI:

    CSTR:32186.14.

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