[1] [1] D. Grischkowsky, S. Keiding, Martin van Exter et al.. Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors[J]. J. Opt. Soc. Am. B, 1990, 7(10): 2006～2015

[2] [2] D. G. Cooke, A. N. MacDonald, A. Hryciw et al.. Transient terahertz conductivity in photoexcited silicon nanocrystal films[J]. Phys. Rev. B, 2006, 73: 193311-1～193311-4

[3] [3] Martin van Exter, D. Grischkowsky. Carrier dynamics of electrons and holes in moderately doped silicon[J]. Phys. Rev. B, 1990, 41(17): 12140～12149

[4] [4] David G. Cooke, A. Nicole MacDonald, Aaron Hryciw et al.. Ultrafast terahertz conductivity of photoexcited nanocrystalline silicon[J]. J. Mater. Sci.: Mater. Electron., 2007, 18: S447～S452

[5] [5] Zhang Zhenwei, Cui Wweili, Zhang Yan et al.. Terahertz time-domain spectroscopy imaging[J]. J. Infrared Millim. Waves, 2006, 25(3)： 217～220

[6] [6] Wang Xiaohong, Zhang Liangliang, Hu Ying et al.. Applications of terahertz pulse in the DNA molecule[J]. Spectroscopy and Spectral Analysis, 2006, 26(3)： 385～391

[7] [7] Hu Ying, Zhang Cunling, Shen Jingling et al.. Time-domain terahertz spectroscopy of (100)MgO and (100)LaAlO3 substrates[J]. Acta Physica Sinica, 2004, 53(6)： 1772～1776

[8] [8] K. P. H. Lui, F. A. Hegmann. Ultrafast carrier relaxation in radiation-damaged silicon on sapphire studied by optical-pump-teraheretz-probe experiments[J]. Appl. Phys. Lett., 2001, 78: 3478～3480

[9] [9] M. C. Beard, G. M. Turner, C. A. Schmuttenmaer. Transient photoconductivity in GaAs as measured by time-resolved terahertz spectroscopy[J]. Phys. Rev. B, 2000, 62: 15764～15777

[10] [10] S. E. Ralph, Y. Chen. Subpicosecond photoconductivity of In0.53Ga0.47As: intervalley scattering rates observed via THz spectroscopy[J]. Phys. Rev. B, 1996, 54: 5568～5573