[1] [1] Y. Zhang, C. S. Wenlan, R. E. Leoni et al.. 40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology[J]. IEEE Electron Device Letters, 2003, 24(9): 529～531

[2] [2] Qi Wang, Jihe Lv, Deping Xiong et al.. Metamorphic In0.53Ga0.47As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD[J]. Chin. Opt. Lett., 2007, 5(6): 358～360

[3] [3] Jihe Lv, Hui Huang, Xiaomin Ren et al.. Monolithically integrated long-wavelngth tunable photodetector[J]. IEEE J. Lightwave Technol., 2008, 26(3): 338～342

[4] [4] Jing Zhou, Xiaomin Ren, Qi Wang et al.. Surface characterization of epitaxial lateral overgrowth of InP on InP/GaAs substrate by MOCVD[J]. Microelectronics Journal, 2007, 38(2):255～258

[5] [5] M. T. Bulsara, C. Leitz and E. A. Fitzgerald. Relaxed InxGa1-xAs graded buffers grown with organometallic vapor phase epitaxy on GaAs [J]. Appl. Phys. Lett., 1998, 72(13): 1608～1610

[6] [6] N. J. Quitorinano, E. A. Fitzgerald. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation[J]. J. Appl. Phys., 2007, 102:033511-1～033511-17

[7] [7] Y. Takano, T. Sasaki, Y. Nagaki et al.. Two-step growth of InP on GaAs substrates by metalorganic vapor phase epitaxy[J]. Journal of Crystal Growth, 1996, 169: 621～624

[8] [8] Aiguang Ren, Xiaomin Ren, Qi Wang et al.. Heteroepitaxy of In0.53Ga0.47As on GaAs substrate by low pressure metalorganic chemical vapor deposition for the OEIC applications[J]. Microelectronics Journal, 2006, 37(8): 700～704

[9] [9] T. Kimura, T. Kimura, E. Ishimura et al.. Improvement of InP crystal quality grown on GaAs substrates and device applications[J]. Journal of Crystal Growth, 1991, 107(1-4): 827～831

[10] [10] Norio Hayafuji, Tatsuya Kimura, Naohito Yoshida et al.. Improvement of InP crystal quality on GaAs substrates by thermal cyclic annealing[J]. Japanese Journal of Applied Physics, 1989, 28(10): L1721～L1724

[11] [11] C. Hu. Simpson, W. A. Jesser. On the use of low energy misfit dislocation structures to filter threading dislocations in epitaxial heterostructures[J]. Physica Status Solidi (a), 1995, 149(1): 9～20