Chinese Journal of Lasers, Volume. 51, Issue 8, 0801006(2024)

Transverse Mode Characteristics Analysis of Semiconductor Laser with High‐Order Surface Curved Gratings

Hongjin Liang, Yonggang Zou*, Jie Fan, Xiyao Fu, Ke Shi, and Kun Tian
Author Affiliations
  • State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, Jilin, China
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    Figures & Tables(12)
    Model diagram of surface high-order curved grating laser
    Schematic of surface high-order curved grating
    Optical field distributions under different modes
    Layer refractive index distribution of simulation model
    Coupling coefficient and normalized intensity versus grating duty cycle
    Coupling coefficient and normalized intensity versus etch depth
    SEM images of curved grating. (a) Surface view 1; (b) surface view 2; (c) sectional view
    Surface high order curved grating semiconductor laser
    Output characteristic curves of device. (a) P-I-V curves; (b) spectrum at 1 A current; (c) spectrum at 2 A current
    Spot patterns at different currents. (a)(b)(c) Curved grating DFB-LD; (d)(e)(f) FP-LD
    Slow axis divergence angles at different currents. (a)(b)(c) Curved grating DFB-LD; (d)(e)(f) FP-LD
    Fast axis divergence angles of curved grating DFB-LD at different currents. (a) 0.5 A; (b) 1.2 A; (c) 2.1 A
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    Hongjin Liang, Yonggang Zou, Jie Fan, Xiyao Fu, Ke Shi, Kun Tian. Transverse Mode Characteristics Analysis of Semiconductor Laser with High‐Order Surface Curved Gratings[J]. Chinese Journal of Lasers, 2024, 51(8): 0801006

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    Paper Information

    Category: laser devices and laser physics

    Received: Dec. 6, 2023

    Accepted: Jan. 16, 2024

    Published Online: Apr. 11, 2024

    The Author Email: Zou Yonggang (zouyg@cust.edu.cn)

    DOI:10.3788/CJL231481

    CSTR:32183.14.CJL231481

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