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Acta Physica Sinica, Volume. 69, Issue 5, 057201-1(2020)

Microstructure and thermoelectric property of (Bi1–xTbx)2(Te0.9Se0.1)3 fabricated by high pressure sintering technique

Ping Zou1、*, Dan Lü1, and Gui-Ying Xu2
Author Affiliations
  • 1School of Materials Science and Engineering, Guizhou Minzu University, Guiyang 550025, China
  • 2School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (14)
    Equations (1)
    References (21)
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    Figures & Tables(14)
    XRD patterns of the (Bi1–xTbx)2(Te0.9Se0.1)3 (x = 0, 0.002, 0.004, 0.008) HPS samples.

    Fig. 1. XRD patterns of the (Bi1–xTbx)2(Te0.9Se0.1)3 (x = 0, 0.002, 0.004, 0.008) HPS samples.

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    FE-SEM of the (Bi1–xTbx)2(Te0.9Se0.1)3 HPS sample (x = 0.004).

    Fig. 2. FE-SEM of the (Bi1–xTbx)2(Te0.9Se0.1)3 HPS sample (x = 0.004).

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    The temperature dependences of electrical conducti-vities for the HPS samples doped with different Tb contents.

    Fig. 3. The temperature dependences of electrical conducti-vities for the HPS samples doped with different Tb contents.

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    The temperature dependence of Seebeck coefficient for the HPS samples doped with different Tb contents.

    Fig. 4. The temperature dependence of Seebeck coefficient for the HPS samples doped with different Tb contents.

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    Temperature dependence of power factor for the HPS samples doped with different Tb contents.

    Fig. 5. Temperature dependence of power factor for the HPS samples doped with different Tb contents.

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    Temperature dependence of thermal conductivities for the HPS samples: (a) Tb-free sample (x = 0); (b)Tb-doped sample (x = 0.004).

    Fig. 6. Temperature dependence of thermal conductivities for the HPS samples: (a) Tb-free sample (x = 0); (b)Tb-doped sample (x = 0.004).

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    Temperature dependence of the figure of merit ZT for the Tb-free HPS sample and Tb-doped HPS sample with x = 0.004.

    Fig. 7. Temperature dependence of the figure of merit ZT for the Tb-free HPS sample and Tb-doped HPS sample with x = 0.004.

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    Temperature dependence of electrical conductivity for the annealed samples doped with different Tb contents.

    Fig. 8. Temperature dependence of electrical conductivity for the annealed samples doped with different Tb contents.

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    Temperature dependence of Seebeck coefficient for the annealed samples doped with different Tb contents.

    Fig. 9. Temperature dependence of Seebeck coefficient for the annealed samples doped with different Tb contents.

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    Temperature dependence of power factor for the annealed samples doped with different Tb contents.

    Fig. 10. Temperature dependence of power factor for the annealed samples doped with different Tb contents.

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    Temperature dependence of thermal conductivity for the annealed sample with x = 0.004.

    Fig. 11. Temperature dependence of thermal conductivity for the annealed sample with x = 0.004.

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    Temperature dependence of the figure of merit ZT for the Tb-free annealed sample and Tb-doped annealed sample with x = 0.004.

    Fig. 12. Temperature dependence of the figure of merit ZT for the Tb-free annealed sample and Tb-doped annealed sample with x = 0.004.

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    • Table 1.

      Lattice constants of (Bi1–xTbx)2(Te0.9Se0.1)3 (x = 0, 0.002, 0.004, 0.008).

      (Bi1–xTbx)2(Te0.9Se0.1)3 (x = 0, 0.002, 0.004, 0.008)样品的晶格常数

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      Table 1.

      Lattice constants of (Bi1–xTbx)2(Te0.9Se0.1)3 (x = 0, 0.002, 0.004, 0.008).

      (Bi1–xTbx)2(Te0.9Se0.1)3 (x = 0, 0.002, 0.004, 0.008)样品的晶格常数

      Samplex = 0 x = 0.002 x = 0.004 x = 0.008
      a/Å 4.37484.380864.382054.38468
      c/Å 30.345630.3493130.3501330.35389
      V/Å3502.96504.41504.70505.37

    • Table 2.

      Carrier concentrations and mobility of (Bi1–xTbx)2(Te0.9Se0.1)3samples.

      (Bi1–xTbx)2(Te0.9Se0.1)3样品的载流子浓度和迁移率

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      Table 2.

      Carrier concentrations and mobility of (Bi1–xTbx)2(Te0.9Se0.1)3samples.

      (Bi1–xTbx)2(Te0.9Se0.1)3样品的载流子浓度和迁移率

      SamplesCarrier concentrationn/1019 cm–3Carrier mobility μ/cm2·V–1·s–1
      x = 0 (HPS) 1.92197.98
      x = 0.002 (HPS) 3.95133.53
      x = 0.004 (HPS) 6.5195.31
      x = 0.008 (HPS) 7.1792.39
      x = 0.004 (Annealed) 1.36599.34
      x = 0.008 (Annealed) 1.77491.17
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    Ping Zou, Dan Lü, Gui-Ying Xu. Microstructure and thermoelectric property of (Bi1–xTbx)2(Te0.9Se0.1)3 fabricated by high pressure sintering technique [J]. Acta Physica Sinica, 2020, 69(5): 057201-1

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    Paper Information

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    Received: Oct. 14, 2019

    Accepted: --

    Published Online: Nov. 18, 2020

    The Author Email:

    DOI:10.7498/aps.69.20191561

    Topics

    Nuclear physics
    Particles and fields
    Particle and nuclear astrophysics and cosmology