Chinese Journal of Liquid Crystals and Displays, Volume. 40, Issue 4, 566(2025)
Mechanism analysis and suppression measures for gate data short defects in oxide TFT
Fig. 3. （a）Illustration of DGS defects in display；（b）Array substrate layout map in active area；（c）DGS morphology in AOI；（d）DGS morphology in FIB；（e）Spectral analysis results of foreign objects.
Fig. 5. GI breakdown voltage for different SiNx/SiOxthickness ratios
Fig. 6. DGS rate as a function of gate voltage in display deterioration excitation experiments
Fig. 8. DGS decrease ratio in display deterioration under different optimization conditions
Table 1. Dielectric properties of SiNxand SiOx capacitors
View tableView in ArticleTable 1. Dielectric properties of SiNxand SiOx capacitors
膜层 厚度/nm 电容/F 介电损耗/% 相对介电常数 SiNx 287.7 1.97E-10 0.18 6.40 SiOx 91.8 3.79E-10 0.89 3.93
Table 2. Capacitance and dielectric loss for different SiNx/SiOx stack thickness ratios
View tableView in ArticleTable 2. Capacitance and dielectric loss for different SiNx/SiOx stack thickness ratios
SiNx 厚度/nm SiOx 厚度/nm 电容/F 介电损耗/% 300 100 1.22E-12 0.25 250 150 1.15E-12 0.35 200 200 1.07E-12 0.44
Table 3. Factors affecting DGS and their corresponding mechanisms
View tableView in ArticleTable 3. Factors affecting DGS and their corresponding mechanisms
DGS影响因素 DGS机理 对应解决方案 栅极电压 热击穿、电迁移 降低栅极电压 GI SiNx/SiOx厚度比例 热击穿、Cu扩散 叠层GI中SiOx厚度比例下降 刷新率 电迁移 -
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Dan LIU, Xiaojun FAN, Wei CEHN, Wei LIU, Chuan LIU, Hongwei DU, Sheng YANG, Xu WU, Taiye MIN, Zhangtao WANG, Haoxiong ZHANG, Wei SHEN, Niannian WANG, Yong XIONG, Zhonghao HUANG. Mechanism analysis and suppression measures for gate data short defects in oxide TFT[J]. Chinese Journal of Liquid Crystals and Displays, 2025, 40(4): 566
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Received: Dec. 1, 2024
Accepted: --
Published Online: May. 21, 2025
The Author Email: Zhonghao HUANG (huangzhonghao@boe.com.cn)
