Thickness，as a key parameter of semiconductor films，directly affects their working performance. However，for semiconductor substrates and wafers with micrometer thickness，which are more widely used in the market，the existing measurement methods still have problems such as insufficient accuracy，poor stability and slow measurement speed. In order to solve these problems，this study constructs a high-precision，miniaturized，and low-cost semiconductor thin-film thickness adaptive measurement and correction system based on the principle of infrared interferometric thickness measurement and the principle of laser surface shape detection. Experimental results show that compared with the traditional infrared interferometric thickness measurement system，the film thickness measurement correction system constructed using this paper can improve the accuracy of the measurement results by about 80% and the stability by about 60%，even when measuring the thickness of semiconductor thin films with a tilted component，the same effect can be achieved. The system achieves accurate measurement of the thickness of a single film layer and is able to adaptively correct errors introduced by mechanical vibrations or placement errors that result in small inclinations of the film，providing a solution to the challenge of measuring the thickness of micrometer-sized films with existing techniques.