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Journal of Infrared and Millimeter Waves, Volume. 43, Issue 4, 472(2024)

Investigation on p-type doping of PBn unipolar barrier InAsSb photodetectors

Jian ZHANG1, Chao CHANG1, Hong-Fu LI1, Yu-Na SHI1, Han-Xiang YIN1, Yan-Hui LI1, Biao YUE1, Hai-Peng WANG1,2, Chang-Shan YAN1, Xin-Ran DAI1, Gong-Rong DENG1、*, Jin-Cheng KONG1, Peng ZHAO1、**, and Jun ZHAO1、***
Author Affiliations
  • 1Kunming Institute of Physics，Kunming 650223，China
  • 2Beijing Engineering Research Center of Mixed Reality and Advanced Display，School of Optics and Photonics，Beijing Institute of Technology，Beijing 100081，China
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    [1] Deng G, Yang W, Zhao P et al. High operating temperature InAsSb-based mid-infrared focal plane array with a band-aligned compound barrier[J]. Applied Physics Letters, 116, 031104(2020).

    [2] Deng G, Song X, Fan M et al. Upside-down InAs/InAs1-xSbx type-II superlattice-based nBn mid-infrared photodetectors with an AlGaAsSb quaternary alloy barrier[J]. Optics Express, 28, 13616-13624(2020).

    [3] Ting D Z, Fisher A M, Pepper B J et al. Progress in InAs/InAsSb superlattice barrier infrared detectors[C], 12107, 167-175(2022).

    [4] Soibel A, Ting D Z, Rafol S B et al. Mid-wavelength infrared InAsSb/InAs nBn detectors and FPAs with very low dark current density[J]. Applied Physics Letters, 114, 161103(2019).

    [5] Klipstein P C. Perspective on III–V barrier detectors[J]. Applied Physics Letters, 120, 060502(2022).

    [6] Klipstein P, Klin O, Grossman S et al. MWIR InAsSb XBn detectors for high operating temperatures[C], 7660, 939-947(2010).

    [7] Rogalski A, Martyniuk P, Kopytko M et al. InAsSb-based infrared photodetectors: Thirty years later on[J]. Sensors, 20, 7047(2020).

    [8] Shockley W, Read Jr W T. Statistics of the recombinations of holes and electrons[J]. Physical Review, 87, 835(1952).

    [9] Hall R N. Electron-hole recombination in germanium[J]. Physical Review, 87, 387(1952).

    [10] Ting D Z Y, Soibel A, Höglund L et al. Theoretical aspects of minority carrier extraction in unipolar barrier infrared detectors[J]. Journal of Electronic Materials, 44, 3036-3043(2015).

    [11] Reine M, Pinkie B, Schuster J et al. New model for the ideal nBn infrared detector[C], 9070, 309-325(2014).

    [12] Glasmann A, Prigozhin I, Bellotti E. Understanding the CV Characteristics of InAsSb-Based nBn Infrared Detectors With N-and P-Type Barrier Layers Through Numerical Modeling[J]. IEEE Journal of the Electron Devices Society, 7, 534-543(2019).

    [13] Schuster J, Keasler C A, Reine M et al. Numerical simulation of InAs nBn back-illuminated detectors[J]. Journal of electronic materials, 41, 2981-2991(2012).

    [14] Klipstein P C. XBnn and XBpp infrared detectors[J]. Journal of Crystal Growth, 425, 351-356(2015).

    [15] Du X[M]. Mid-infrared InAs-based photodetectors: effects of processing and structures on dark currents(2018).

    [16] Vul A Y., Yu, Goldberg A., M. Levinshtein, S. Rumyantsev, M. Shur. Handbook Series on Semiconductor Parameters[M](1996).

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    [18] D'Souza A I, Robinson E, Ionescu A C. InAsSb detector and FPA data and analysis[C], 9100, 32-40(2014).

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    Jian ZHANG, Chao CHANG, Hong-Fu LI, Yu-Na SHI, Han-Xiang YIN, Yan-Hui LI, Biao YUE, Hai-Peng WANG, Chang-Shan YAN, Xin-Ran DAI, Gong-Rong DENG, Jin-Cheng KONG, Peng ZHAO, Jun ZHAO. Investigation on p-type doping of PBn unipolar barrier InAsSb photodetectors[J]. Journal of Infrared and Millimeter Waves, 2024, 43(4): 472

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    Paper Information

    Category: Research Articles

    Received: Oct. 20, 2023

    Accepted: --

    Published Online: Aug. 27, 2024

    The Author Email: Gong-Rong DENG (gongrong.deng@hotmail.com), Peng ZHAO (pierre.zhao@hotmail.com), Jun ZHAO (junzhao80@163.com)

    DOI:10.11972/j.issn.1001-9014.2024.04.006

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology