Acta Optica Sinica, Volume. 42, Issue 1, 0131001(2022)
Analysis and Simulation on Damage Characteristics of Multilayer Optical Film by Pulsed Laser
Figures & Tables(16)
Fig. 3. Temperature distribution in film under incidence of pulse with pulse width of 10 ns. (a) Temperature at center of film; (b) curve of temperature peak with time
Fig. 4. Spatial distribution of stress field in film under incidence of pulse with pulse width of 10 ns. (a) Radial stress; (b) annular stress; (c) axial stress
Fig. 5. Maximum stress field distribution of film under incidence of pulse with pulse width of 10 ns. (a) HfO2 film layer; (b) SiO2 film layer
Fig. 6. Change of photon ionization rate in film under incidence of pulse with pulse width of 10 ns. (a) Avalanche ionization rate; (b) multiphoton ionization rate
Fig. 7. Free electron density distribution curve in film under incidence of pulse with pulse width of 10 ns
Fig. 8. Temperature distribution in film under incidence of pulse with laser energy density of 8 J/cm2. (a) Temperature at center of film; (b) curve of temperature peak with time
Fig. 9. Spatial distribution of stress field in film under incidence of pulse with laser energy density of 8 J/cm2. (a) Radial stress; (b) annular stress; (c) axial stress
Fig. 10. Maximum stress field distribution of film under incidence of pulse with laser energy density of 8 J/cm2. (a) HfO2 film layer; (b) SiO2 film layer
Fig. 11. Free electron density distribution curve in film under incidence of pulse with laser energy density of 8 J/cm2
Table 1. Thermodynamic parameters of thin film materials
View tableTable 1. Thermodynamic parameters of thin film materials
Material Refractive index Absorption coefficient / cm-1 ρc / (J·cm-3·℃ -1) K / (10-3 W·cm-1·℃-1) Melting point /℃ Young’s modulus / (1010 Pa) Thermal coefficient of expansion / (10-6 ℃-1) Poisson’s ratio HfO2 1.812 3.54 4.64 20.0 2850 24.0 6.6 0.29 SiO2 1.431 1.41 2.10 1.7 1723 8.7 0.5 0.16
Table 2. Physical parameters of thin film materials
View tableTable 2. Physical parameters of thin film materials
Material Band gap /eV Effective electron mass / (10-31 kg) Initial free electron density / cm-3 Electron saturated drift velocity / (105 m·s-1) Field intensity to overcome ionization scattering / (MV·m-1) Field intensity to overcome phonon scattering / (MV·m-1) Field intensity to overcome thermal scattering / (MV·m-1) HfO2 5.7 2.9152 1010 2.0 30 3.2 0.01 SiO2 7.8 4.5550 1010 1.7 30 3.2 0.01
Table 3. Film damage characteristics under different pulse widths
View tableTable 3. Film damage characteristics under different pulse widths
Parameter Pulse width /ns 10 20 30 40 50 Maximum temperature /℃ 1860 1721 1616 1540 1482 Maximum hoop stress /(108 Pa) 1.42 1.22 1.02 9.90 9.20 Free electron density /(1016 cm-3) 1.105 1.066 1.058 1.049 1.042 Whether it is damaged Yes Yes No No No
Table 4. Film damage characteristics under different energy density
View tableTable 4. Film damage characteristics under different energy density
Parameter Energy density /(J·cm-2) 10 8 6 4 2 Maximum temperature /℃ 1860 1489 1117 744 372 Maximum hoop stress /(107 Pa) 14.10 11.50 8.78 5.80 2.93 Free electron density /(1016 cm-3) 1.105 1.095 1.082 1.062 1.042 Whether it is damaged Yes Yes No No No
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Mengke Zheng, Jie Li, Rongzhu Zhang, Liqun Chai. Analysis and Simulation on Damage Characteristics of Multilayer Optical Film by Pulsed Laser[J]. Acta Optica Sinica, 2022, 42(1): 0131001
Paper Information
Category: Thin Films
Received: May. 28, 2021
Accepted: Aug. 3, 2021
Published Online: Dec. 22, 2021
The Author Email: Zhang Rongzhu (zhang_rz@scu.edu.cn), Chai Liqun (chailiqun@163.com)
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