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Chinese Journal of Lasers, Volume. 40, Issue 6, 606005(2013)

Influence of AlN Interfacial Layer on Electrical Properties of AlGaN/AlN/GaN HEMT Materials Grown by MOCVD

Chen Xiang1、*, Xing Yanhui1, Han Jun1, Li Yingzhi1, Deng Xuguang1, Fan Yaming2, Zhang Xiaodong2, and Zhang Baoshun2
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    Chen Xiang, Xing Yanhui, Han Jun, Li Yingzhi, Deng Xuguang, Fan Yaming, Zhang Xiaodong, Zhang Baoshun. Influence of AlN Interfacial Layer on Electrical Properties of AlGaN/AlN/GaN HEMT Materials Grown by MOCVD[J]. Chinese Journal of Lasers, 2013, 40(6): 606005

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    Paper Information

    Category: materials and thin films

    Received: Jan. 16, 2013

    Accepted: --

    Published Online: May. 22, 2013

    The Author Email: Xiang Chen (xchen2012@sinano.ac.cn)

    DOI:10.3788/cjl201340.0606005

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology