13.4 W single emitter 940 nm semiconductor laser diode with asymmetric large optical cavity

Jianjun Li; Shengjie Lin; Tao Liu; Jianchun Li; Jun Deng; Jun Han; Bifeng Cui

doi:10.3788/col201412.s22502

Chinese Optics Letters, Volume. 12, Issue s2, S22502(2014)

13.4 W single emitter 940 nm semiconductor laser diode with asymmetric large optical cavity

Jianjun Li, Shengjie Lin, Tao Liu, Jianchun Li, Jun Deng, Jun Han, and Bifeng Cui

Key Laboratory of Opto-electronics Technology of Ministry of Education, Beijing University of Technology, Beijing 100124, China

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References(6)

[1] [1] V. V. Ter-Mikirtychev, M. A. Dubinskii, and V. A. Fromzel, Opt. Commun. 197, 403 (2001).

[2] [2] L. Zhou, B. Bo, Y. Wang, B. Jia, D. Bai, Z. Qiao, and X. Gao, Chin. J. Lasers 39, 0802001 (2012).

[3] [3] G. Erbert, F. Bugge, A. Knigge, R. Staske, B. Sumpf, H. Wenzel, and G. Trankle, Proc. SPIE 6133, 61330B (2006).

[4] [4] R. Diamant, Y. Berk, S. Cohen, G. Klumel, M. Levy, Y. Openhaim, O. Peleg, D. Yanson, and Y. Karni, Proc. SPIE 8039, 80390E (2011).

[5] [5] J. Li, B. Cui, J. Deng, J. Han, T. Liu, J. Li, and S. Zhang Chin. J. Lasers 40, 1102011 (2013).

[6] [6] J. Li, J. Han, J. Deng, D. Zou, and G. Shen, Chin. J. Lasers 33, 1159 (2006).

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Jianjun Li, Shengjie Lin, Tao Liu, Jianchun Li, Jun Deng, Jun Han, Bifeng Cui, "13.4 W single emitter 940 nm semiconductor laser diode with asymmetric large optical cavity," Chin. Opt. Lett. 12, S22502 (2014)

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Paper Information

Category: Optoelectronics

Received: Mar. 26, 2014

Accepted: May. 3, 2014

Published Online: Dec. 4, 2014

The Author Email:

DOI:10.3788/col201412.s22502

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology