Journal of Inorganic Materials, Volume. 38, Issue 4, 421(2023)

Gelatin/Carboxylated Chitosan Gated Oxide Neuromorphic Transistor

Xinli CHEN, Yan LI, Weisheng WANG, Zhiwen SHI, and Liqiang ZHU*
Author Affiliations
  • School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
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    References(25)

    [9] ZHU L Q, WAN C J, GUO L Q et al. Artificial synapse network on inorganic proton conductor for neuromorphic systems[J]. Nature Communications, 5: 3158(2014).

    [11] QIU W J, SUN J, LIU W R et al. Multi-gate-driven In-Ga-Zn-O memtransistors with a Sub-60 mV/decade subthreshold swing for neuromorphic and memlogic applications[J]. Organic Electronics, 84: 105810(2020).

    [15] JANG J T, KIM D, CHOI W S et al. One transistor-two memristor based on amorphous indium-gallium-zinc-oxide for neuromorphic synaptic devices[J]. ACS Applied Electronic Materials, 2837(2020).

    [20] TANIOKA A, TAZAWA T, MIYASAKA K et al. Effects of water on the mechanical properties of gelatin films[J]. Biopolymers: Original Research on Biomolecules, 753(1974).

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    Xinli CHEN, Yan LI, Weisheng WANG, Zhiwen SHI, Liqiang ZHU. Gelatin/Carboxylated Chitosan Gated Oxide Neuromorphic Transistor[J]. Journal of Inorganic Materials, 2023, 38(4): 421

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    Paper Information

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    Received: Nov. 28, 2022

    Accepted: --

    Published Online: Oct. 17, 2023

    The Author Email: Liqiang ZHU (zhuliqiang@nbu.edu.cn)

    DOI:10.15541/jim20220709

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