As a wide-bandgap semiconductor, β-Ga₂O₃ holds immense promise for high-power and radio frequency devices. However, its inherently low thermal conductivity and difficulties in p-type doping hinder its device performance and structural design. Heterogeneous integration has emerged as a critical technology to overcome the limitations of single materials and revolutionize device performance. This review summarizes the latest research progress in three heterogeneous integration techniques for β-Ga₂O₃∶ heteroepitaxy, mechanical exfoliation, and ion-cutting technique. The advantages and disadvantages of different integration techniques in terms of material quality, electrical and thermal properties, and device performance are comparatively analyzed. Additionally, the effects of substrate types, interfacial bonding, and interface layer thickness on heat dissipation and vertical electron transport are discussed. This review also analyzes the current challenges faced byβ-Ga₂O₃ heterogeneous integration technology and prospects its future development trends, aiming to stimulate domestic research on β-Ga₂O₃ heterogeneous integrated substrates, promote the development of β-Ga₂O₃ heterogeneous integrated devices, and accelerate the industrialization of β-Ga₂O₃ materials and devices.