Optoelectronic Technology, Volume. 43, Issue 4, 298(2023)
Regulation of Copper Content and Simulation of CIGSSe Solar Cells Prepared by Nanoparticles Ink Method
Figures & Tables(13)
Fig. 3. The SEM images of the surface of absorption layers of CIGSSe films prepared with different
Fig. 4. The Hall Effect test results of CIGSSe absorption layers prepared from nanoparticles inks with different
Fig. 5. Raman spectra of absorption layer films prepared from the inks with different
Fig. 6. The
Fig. 8. Simulation results of carrier recombination rate of the devices with different
Fig. 9. Simulation results of energy band distribution of the devices with different
Table 1. Material parameters of functional layers of device
View tableView in ArticleTable 1. Material parameters of functional layers of device
参数 ITO i‑ZnO CdS CIGS 厚度 /μm 0.3 0.03 0.05 1.5 电子亲和势/eV 4.43 4.4 4.2 4.5 介电常数 9 9 10 13.6 Nc 电子有效能级密度/（cm-3） 3×1018 2.2×1018 2.2×1018 2.2×1018 Nv 电子有效能级密度/（cm-3） 1.7×1019 2.2×1018 2.2×1018 2.2×1019 带隙 /eV 3.3 3.3 2.4 1.15 电子迁移率/（cm2·V-1s-1） 100 100 100 100 空穴迁移率/（cm2·V-1·s-1） 30 30 25 可调节 Nd 施主缺陷浓度/（cm-3） 1×1020 1×1020 1.1×1018 0 Na 受主缺陷浓度/（cm-3） 0 0 0 可调节 Nt 缺陷态密度/（cm-3） 1×1017 1×1017 1×1018 1×1015 缺陷类型 施主 施主 施主 受主 能级/eV 1.65 1.65 1.2 0.6 偏差/eV 0.1 0.1 0.1 0.1 捕获电子/cm2 1×10-12 1×10-12 1×10-17 5×10-13 空穴浓度/cm2 1×10-15 1×10-15 1×10-12 1×10-15
Table 2. The ICP results of nanoparticles
View tableView in ArticleTable 2. The ICP results of nanoparticles
CGI Cu Wt/(%) In Wt/(%) Ga Wt/(%) S Wt/(%) 0.77 16.47 26.69 7.03 16.40 0.89 15.26 21.49 5.68 15.94 1.03 18.16 22.09 5.88 18.12 1.14 17.04 18.74 4.98 17.86 1.22 19.73 20.46 5.28 20.53
Table 3. The
J ‑V parameters of devices prepared from the inks with differentCGI View tableView in ArticleTable 3. The
J ‑V parameters of devices prepared from the inks with differentCGI CGI 开路电压 /mV 短路电流密度 /（A·cm-2) 填充因子 /(%) 转换效率/ (%) 0.77 465.58 28.36 56.77 7.05 0.89 505.98 34.16 51.99 7.56 1.03 479.96 35.44 59.31 10.09 1.14 512.52 28.82 54.60 8.11
Table 4. Hole concentration and mobility of absorber films prepared with different
CGI View tableView in ArticleTable 4. Hole concentration and mobility of absorber films prepared with different
CGI CGI 空穴浓度/(cm-3) 空穴迁移率/ (cm2· 0.77 3.2×1016 0.92 0.89 8.5×1016 0.44 1.03 8.2×1016 0.75 1.14 1.2×1017 0.50
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Wenzhu WU, Ranran HAN, Zengzhou YANG, Jinchen HAN, Zhijie XIA, Hong ZHAO, Xin YAO, Qianming DONG, Zugang LIU. Regulation of Copper Content and Simulation of CIGSSe Solar Cells Prepared by Nanoparticles Ink Method[J]. Optoelectronic Technology, 2023, 43(4): 298
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Received: Apr. 7, 2023
Accepted: --
Published Online: Mar. 21, 2024
The Author Email: LIU Zugang (zgliu78@cjlu.edu.cn)
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