Broadband 1T-polytype tantalum disulfide saturable absorber for solid-state bulk lasers

Mengxia Wang; Hailong Qiu; Tianwen Yang; Zhengping Wang; Chuanrui Zhao; Yuanan Zhao; Ting Yu; Yuyao Jiang; Meiling Chen; Yafei Lian; Ge Zhang; Hongjun Liu; Zhanggui Hu; Jianda Shao

doi:10.1364/PRJ.461522

Photonics Research, Volume. 10, Issue 9, 2122(2022)

Broadband 1T-polytype tantalum disulfide saturable absorber for solid-state bulk lasers

Mengxia Wang^1,2,3, Hailong Qiu^3,8、*, Tianwen Yang³, Zhengping Wang⁴, Chuanrui Zhao⁴, Yuanan Zhao^1,2,9、*, Ting Yu⁵, Yuyao Jiang^5,6, Meiling Chen^1,2, Yafei Lian^1,2, Ge Zhang^1,2, Hongjun Liu³, Zhanggui Hu³, and Jianda Shao^1,2,7,10、*

Author Affiliations

¹Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystal, Tianjin University of Technology, Tianjin 300384, China

⁴State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

⁵Laboratory of High Power Fiber Laser Technology, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

⁶College of Science, Shanghai University, Shanghai 200444, China

⁷Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China

⁸e-mail: qiu@tjut.edu.cn

⁹e-mail: yazhao@siom.ac.cn

¹⁰e-mail: jdshao@siom.ac.cn

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Figures & Tables(11)

Fig. 1. Band gap distribution of several typical 2D materials.

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Fig. 2. Schematic diagram of CVD reactor.

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$(a) Crystal structure of 1T-TaS2. (b) XRD pattern of the 1T-TaS2. (c) Typical SEM image of 1T-TaS2 nanosheets on mica substrate. (d) AFM image of the 1T-TaS2 nanosheets and the typical height profile. (e) Selected area electron diffraction of 1T-TaS2 nanosheets. (f) High-resolution TEM image of 1T-TaS2 nanosheets.$

Fig. 3. (a) Crystal structure of 1T-TaS2. (b) XRD pattern of the 1T-TaS2. (c) Typical SEM image of 1T-TaS2 nanosheets on mica substrate. (d) AFM image of the 1T-TaS2 nanosheets and the typical height profile. (e) Selected area electron diffraction of 1T-TaS2 nanosheets. (f) High-resolution TEM image of 1T-TaS2 nanosheets.

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Fig. 4. (a) Visible NIR transmission spectra of the 1T-TaS2 sample and mica substrate in the range 0.2–2.5 μm. (b) FTIR transmission spectrum in the range 1.5–10 μm.

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Fig. 5. (a) TAS pumped at 1500 nm and probed from 490 to 900 nm. (b) TAS pumped at 1500 nm and probed from 700 to 1100 nm. (c), (d) Extracted TAS with different delay time.

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Fig. 6. (a) Attenuation dynamic curve at different wavelengths. (b) Illustration of the carrier dynamics process in 1T-TaS2.

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Fig. 7. (a) Schematic of saturable absorption. Z-scan results of 1T-TaS2 sample at (b) 515 nm, (c) 1030 nm, (d) 1500 nm, (e) 2000 nm, and (f) 2500 nm. Insets show the variations in the transmittance with incident intensity.

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Fig. 8. Passively Q-switched laser performance of the 1T-TaS2. Pulse width and repetition frequency, single-pulse energy and peak power, the corresponding pulse trains and single-pulse profiles at (a)–(c) 1.06 μm, (d)–(f) 1.34 μm, and (g)–(i) 1.94 μm.

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Table 1. Fitting Parameters of TAS Dynamics of 1T-TaS₂ at Different Wavelengths
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Table 1. Fitting Parameters of TAS Dynamics of 1T-TaS₂ at Different Wavelengths
$λ$ (nm) $τ_{1}$ (ps) $τ_{2}$ (ns) $τ_{3}$ (ns)
726 0.35 0.11 6.50
973 0.46 0.19 7.56
1030 0.57 0.18 8.78

Table 2. NLO Parameters of 1T-TaS₂ and Other Typical 2D SA Materials

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Table 2. NLO Parameters of 1T-TaS₂ and Other Typical 2D SA Materials

Material	$λ$ (nm)	$β$ ( $cm {MW}^{- 1}$ )	$δ T$ (%)	$I_{s}$ ( $MW {cm}^{- 2}$ )	Reference
${1 T-TaS}_{2}$	515	$- 24.94 \pm 1.03$	15.4	1.2	This work
	1030	$- 22.60 \pm 0.52$	6.7	0.2
	1500	$- 2.57 \pm 0.17$	9.4	6.4
	2000	$- 0.58 \pm 0.03$	9.6	27.4
	2500	$- 0.55 \pm 0.03$	6.6	28.8
Graphene	515	−10.5	—	2.6	[61]
Graphene	1030	−12.4	—	3.2	[61]
BP	532	$- (0.20 \pm 0.08) \times 10^{- 6}$	—	—	[62]
BP	1060	$- (1.09 \pm 0.10) \times 10^{- 5}$	15.6	$2.84 \times 10^{5}$	[63]
${MoS}_{2}$	1030	$- (6.6 \pm 0.4) \times 10^{- 2}$	—	—	[64]
${WS}_{2}$	1040	$3.07 \pm 1.31$	—	—	[65]
${Sb}_{2} {Te}_{3}$	1030	−0.96	—	—	[66]
Te/PVP	1060	$- 1.13 \times 10^{- 4}$	10.5	$2.6 \times 10^{4}$	[60]

Table 3. Passive Q-switching Performance for a Solid-State Laser of 2D 1T-TaS₂

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Table 3. Passive Q-switching Performance for a Solid-State Laser of 2D 1T-TaS₂

$λ$ (μm)	Laser Crystal	Laser Properties
$λ$ (μm)	Laser Crystal	Absorbed Pump Power (W)	CW Output Power (W)	Q-switched Output Power (mW)	Pulse Width (ns)	Single-pulse Energy (μJ)	Peak Power (W)
1.06	Nd:YAG	1.10	0.38	102	200	0.48	2.41
1.34	$Nd : {YVO}_{4}$	2.03	0.75	85	110.5	0.21	1.87
1.94	Tm:YAP	4.11	1.37	323	692.5	3.89	5.62

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Mengxia Wang, Hailong Qiu, Tianwen Yang, Zhengping Wang, Chuanrui Zhao, Yuanan Zhao, Ting Yu, Yuyao Jiang, Meiling Chen, Yafei Lian, Ge Zhang, Hongjun Liu, Zhanggui Hu, Jianda Shao, "Broadband 1T-polytype tantalum disulfide saturable absorber for solid-state bulk lasers," Photonics Res. 10, 2122 (2022)

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