Chinese Journal of Liquid Crystals and Displays, Volume. 35, Issue 11, 1103(2020)

Influence of laser irradiation on solid-electrolyte based metal-oxide thin film transistors performance

YANG Qian1, DU Shi-yuan2, and BIAN Rui1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    References(11)

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    [5] [5] CAI W, NING H L, ZHU Z N, et al. Investigation of direct inkjet-printed versus spin-coated ZrO2 for sputter IGZO thin film transistor [J]. Nanoscale Research Letters, 2019, 14: 80.

    [6] [6] YABUTA H, KAJI N, HAYASHI R, et al. Sputtering formation of P-type SnO thin-film transistors on glass toward oxide complimentary circuits [J]. Applied Physics Letters, 2010, 97(7): 072111.

    [11] [11] BEOM K, YANG P, PARK D, et al. Single- and double-gate synaptic transistor with TaOx gate insulator and IGZO channel layer [J]. Nanotechnology, 2019, 30(2): 025203.

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    YANG Qian, DU Shi-yuan, BIAN Rui. Influence of laser irradiation on solid-electrolyte based metal-oxide thin film transistors performance[J]. Chinese Journal of Liquid Crystals and Displays, 2020, 35(11): 1103

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    Paper Information

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    Received: Apr. 25, 2020

    Accepted: --

    Published Online: Jan. 19, 2021

    The Author Email:

    DOI:10.37188/yjyxs20203511.1103

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