The solid-electrolyte based metal-oxide thin film transistors has huge potential due to its good environment stability and excellent electrical performance. However, the sophisticated fabrication process and time consuming are the main drawbacks involved in the traditional method to modulate the electrical performance of solid-electrolyte based metal-oxide thin film transistors. Laser processing on the materials provides excellent processing speed and precise control. The metal-oxide thin film transistor was realized utilizing high k solid electrolyte as dielectric layer and transparent indium tin oxide (ITO) as semiconductor layer. Prior to the deposition of active layer and electrodes, fs-laser was induced to irradiate on the surface of Ta2O5 dielectric layer. As the intensity of laser irradiation increased, the ION of the transistor was enhanced and the threshold voltage was negatively drifted. In addition, the Excitatory Post Synaptic Current(EPSC) of the solid-electrolyte based metal-oxide thin film transistors was studied under different laser intensities. The EPSC was significantly increased as the laser intensity enhanced. Meanwhile, XPS results showed that the amount of oxygen vacancies could be controlled via laser irradiation. A simple, fast(<1 s) and low-temperature(<45 ℃) method was proposed to modulate the performance of thin film transistors.